电子有效质量随位置变化对半导体量子点杂质态结合能的影响及其压力和温度效应

发布时间：2018-06-14 06:53

本文选题：球形量子点 + 杂质态　；参考：《内蒙古农业大学》2017年硕士论文

【摘要】：在连续介电模型和有效质量近似下,运用变分法研究了半导体有限高势垒球形量子点中杂质态的基态结合能。考虑电子有效质量随着位置的改变对杂质态基态结合能的影响,并在此基础上计算了压力和温度对球形量子点杂质态结合能的影响。分别数值计算了 AlxGa1-xAs/GaAs和AlxGa1-xN/GaN材料球形量子点杂质态基态结合能随量子点尺寸和三元混晶垒材料中Al组分的变化关系,研究了电子有效质量随位置的改变对结合能的影响,并与不考虑电子有效质量随位置的改变做了比较。讨论了球形量子点的温度及其压力效应。对两种材料的计算结果表明有如下共同特征:当量子点半径较小时,电子有效质量随位置变化增加了杂质态基态结合能,随着量子点半径增大杂质态基态结合能的增加幅度变小;量子点半径比较大时,电子有效质量随位置的改变降低了杂质态的基态结合能;随着三元混晶Al组分的增加,杂质态的基态结合能单调递增;另外,杂质态结合能随外加压力的增大几乎呈线性增加,但随温度的升高反而降低。
[Abstract]:Under the continuous dielectric model and the effective mass approximation, the ground state binding energies of the impurity states in the semiconductor finite high barrier spherical quantum dots are studied by using the variational method. The effect of the effective mass of the electron on the binding energy of the ground state of the impurity state is considered, and the effects of pressure and temperature on the binding energy of the impurity state of the spherical quantum dot are calculated. The ground state binding energies of spherical quantum dots in AlxGa1-xAs-GaAs and AlxGa1-xNrGaN materials are numerically calculated, respectively. The effect of the effective mass of electrons on the binding energy is studied. It is compared with the change of the effective mass of electron with the change of position. The temperature and pressure effects of spherical quantum dots are discussed. The calculated results of the two materials show that when the radius of quantum dots is small, the effective mass of the electron increases the binding energy of the ground state of the impurity state with the change of position. With the increase of the radius of the quantum dot, the binding energy of the ground state decreases with the increase of the radius of the quantum dot, the binding energy of the ground state decreases with the change of the effective mass of the electron with the change of the position of the quantum dot, and with the increase of the Al component of the ternary mixed crystal, In addition, the binding energy of impurity states increases linearly with the increase of external pressure, but decreases with the increase of temperature.
【学位授予单位】：内蒙古农业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O471.1

【参考文献】