GaN基功率LED制备及其特性研究

发布时间：2018-05-14 00:32

  本文选题：GaN基LED + 工艺制备　； 参考：《北京工业大学》2015年硕士论文

【摘要】：发光二极管作为继白炽灯和荧光灯之后第四代照明光源,具有节能,环保和寿命长的特点。已从最初的景观照明、交通信号显示等领域,开始进入液晶背光和普通室内外照明领域,成为当代信息社会“增光添彩”不可或缺的关键元器件,在农业、医疗等众多新兴的应用市场也逐渐发展起来。GaN基LED性能近年来的快速提升,出现了很多新型LED。本论文围绕GaN基功率和高压发光二极管制备和测试分析开展研究,主要研究内容如下:(1)对GaN基高压LED关键工艺进行了研究和分析。具体分析了影响ICP深槽刻蚀的因素;分析了不同掩膜对深槽台阶形貌的影响;分析了ITO腐蚀不干净对ICP刻蚀产生的影响,以及对LED器件的影响;分析了不同电极材料和结构对LED器件的影响。(2)制备了12V蓝光高压LED,进行了25℃-60℃变温实验和测试,结果表明蓝光芯片的光通量随温度升高呈下降趋势;随着温度的升高,正向电压变小,发光效率增大。说明俄歇复合不是导致GaN基LED光衰减的主要原因,温度的变化对材料的影响不同。(3)设计并制备了12VGaN基绿光高压LED,并对其经过了一系列反向人体模式静电打击后的测试和变电流的测试。LED样品受到较大的反向电压静电打击后,几乎失去了PN结的特性,这时LED样品失效,得出静电打击对GaN基高压LED和普通LED器件影响相同。(4)对色温为2700K、3000K、4000K、5500K的LED器件进行了25-900mA的变电流实验,测试温度25℃,随着注入电流增大,LED的光通量上升速率逐渐下降,光效先上升后迅速下降,是由于从局域态中溢出的电子发生了非辐射复合导致的;显色指数上升了30%-35%,蓝光辐射量增加,荧光粉转换效率下降(5)分别选取A、B两公司1W白光以及A公司1W蓝光功率LED为样品,进行了在350mA,温度为-35oC度,时间2250小时的低温老化试验。LED样品的光通量和光效均呈不断衰减趋势,虽然下降程度不同,但总体趋势是一样的。蓝光器件样品光通维持率全部高于白光器件。所有器件电压,也均随时间增加呈小幅上升趋势,正向电压上升会出现色彩失真,会产生色差,在使用中应尽量考虑环境温度过低对LED的影响,依照实际要求来选择不同参数的LED,以达到提高能效、节约能源的目的。
[Abstract]:As the fourth generation lighting source after incandescent lamp and fluorescent lamp, LED has the characteristics of energy saving, environmental protection and long life. From the original landscape lighting, traffic signal display and other fields, began to enter the field of LCD backlight and ordinary indoor and outdoor lighting, become the modern information society "add light" indispensable key components in agriculture, The performance of GaN-based LED has been improved rapidly in recent years, and a lot of new LEDs have emerged. This thesis focuses on the fabrication and testing of GaN based power and high voltage light-emitting diodes. The main research contents are as follows: 1) the key processes of GaN based high voltage LED are studied and analyzed. The factors influencing the deep groove etching of ICP are analyzed, the influence of different masks on the appearance of deep grooves step, the influence of ITO corrosion on ICP etching and the influence on LED devices are analyzed. The effects of different electrode materials and structures on LED devices were analyzed. The 12V blue light high-voltage LEDs were prepared. The experiments and tests were carried out at 25 鈩，

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