单粒子效应瞬态电荷收集的试验研究

发布时间：2017-12-27 22:01

本文关键词：单粒子效应瞬态电荷收集的试验研究　出处：《中国科学院国家空间科学中心》2016年硕士论文　论文类型：学位论文

【摘要】：空间辐射环境诱发的单粒子效应是由单个高能粒子在器件的材料内沉积能量产生电离电荷形成瞬态脉冲,导致的器件工作状态发生变化或功能失效。高能粒子在器件中,通过直接电离或间接电离产生电荷,电离电荷经历漂移、扩散、复合等作用后被电路的敏感节点被收集,在收集电荷超过一定阈值后,器件产生异常现象。单个高能粒子轰击器件产生电离电荷,并被收集形成瞬态电荷脉冲是众多类型单粒子效应的根源,是深入研究各类单粒子效应的基础。随着半导体器件工艺技术的进步及特征尺寸的减小,对单粒子效应的认识需要在更精细、更准确的空间和时间尺度加以掌握和实现;因此需要能够对单粒子效应在器件中的收集电荷进行实时测试,进而实现单粒子效应的参数提取建模、传播机理及加固设计研究。本文利用脉冲激光开展单粒子效应瞬态电荷脉冲试验研究,对其收集电荷量及收集电荷脉冲进行测试测量与研究。单粒子效应瞬态电荷测量和收集工作对单粒子效应研究具有重要意义。本文的主要研究内容及研究成果如下:(1)选取典型CMOS工艺器件(SRAM),开展SEU效应瞬态电荷试验:开展脉冲激光辐照诱发SRAM的SEU效应试验,利用SEU效应检测系统确定SEU效应的阈值及截面。利用脉冲激光试验装置和快脉冲电荷收集测试系统测量SRAM芯片电源管脚间的单粒子效应瞬态电荷,初步建立收集电荷与SEU效应翻转截面之间的关系。(2)选取典型的BJT工艺器件,进行SET效应瞬态电荷试验:针对线性器件的SET波形特征及收集电荷进行细致的试验评估,研究影响SET脉冲的激光辐照位置、激光聚焦深度、激光能量等因素。全芯片激光辐照评估,进行该芯片的最坏情况分析,并进行敏感器件定位。(3)针对BJT器件产生的SET脉冲,进行SET脉冲防护实验研究:利用仿真软件Hspice对电路建模并在敏感节点注入电荷,在此基础上进行滤波电路等防护设计。通过实验验证了该防护设计,并讨论该设计在不同应用场景下的合理性。
[Abstract]:The single event effect induced by the space radiation environment is caused by the deposition of energy from a single high-energy particle in the material of the device to produce ionization charges, forming transient pulses, resulting in the change of the device's working state or the failure of its function. High energy particles are produced by direct ionization or indirect ionization in the device, and the ionizing charge is subjected to drift, diffusion and recombination. After that, the sensitive nodes of the circuit are collected, and the abnormal phenomenon occurs when the collection charge exceeds a certain threshold. The ionization charge generated by a single high-energy particle bombardment device is collected and formed into transient charge pulses. It is the root of many types of single event effects, and is the basis for further research of various single event effects. With the progress of technology and reduce the feature size of semiconductor devices, understanding of the single particle effect needs to grasp and implement in finer and more accurate spatial and temporal scales; therefore need to be able to real-time testing of single particle effect in the charge collection device, and then realize the parameters of single particle effect extraction research and design transmission mechanism modeling, reinforcement. In this paper, a single particle effect transient charge pulse test is carried out by pulsed laser, and the amount of charge collected and the collection of charge pulse are measured and studied. The measurement and collection of transient charge in single particle effect is of great significance to the study of single particle effect. The main research contents and research results in this paper are as follows: (1) select typical CMOS process devices (SRAM), carry out SEU effect transient charge test: carry out the SEU effect test of SRAM induced by pulsed laser irradiation, and determine the threshold and cross section of SEU effect by SEU effect detection system. The single event effect transient charge between the power pins of the SRAM chip is measured by the pulsed laser test device and the fast pulse charge collection test system, and the relationship between the collection charge and the SEU effect reversal section is initially established. (2) select typical BJT process devices and carry out the SET effect transient charge test. For the detailed evaluation of the SET waveform characteristics and collecting charge of linear devices, we study the factors that influence the SET pulse position, laser depth and laser energy. All chip laser irradiation is evaluated, the worst case analysis of the chip is carried out, and the sensitive device is positioned. (3) aiming at the SET pulse generated by BJT devices, SET pulse protection experiment is carried out. The simulation software Hspice is used to model the circuit and charge the sensitive nodes, and on this basis, filter circuit and other protective designs are carried out. The protection design is verified by the experiment, and the rationality of the design in different application scenes is discussed.
【学位授予单位】：中国科学院国家空间科学中心
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：V524

【相似文献】