当前位置:主页 > 社科论文 > 法治论文 >

几种薄膜材料的湿化学法制备及其性能的研究

发布时间:2018-02-25 03:31

  本文关键词: 铜铟硒 铜铟硫 硅纳米线 光致发光 表面增强拉曼散射 出处:《清华大学》2011年博士论文 论文类型:学位论文


【摘要】:本论文采用电化学沉积、化学液相沉积、金属催化化学腐蚀和置换反应沉积等四种湿化学的方法,分别研究了黄铜矿相薄膜太阳电池吸收层材料、硅纳米线薄膜和表面增强拉曼散射基底薄膜等三种薄膜材料的制备,并研究了薄膜的结构及其光吸收、光致发光和表面增强拉曼散射等性能。 黄铜矿相薄膜材料及其同族元素取代化合物是上个世纪80年代发展起来的新型薄膜太阳电池吸收层材料,被认为是目前最有希望的薄膜太阳电池材料之一。本文分别采用一步电化学沉积和一步化学液相沉积的方法制备CuInSe_2(CISe)和CuInS_2(CIS)前驱薄膜,采用真空退火的后处理方法替代有毒Se化或S化工艺,得到了黄铜矿结构的CISe和CIS薄膜;采用Zn扩散掺杂的方法在CISe薄膜表面上直接形成准同质p-n结,从而可以简化CISe薄膜电池的结构、用于制备无镉CISe薄膜太阳电池。 一维纳米材料由于具有独特的结构和电学、光学、力学等特性引起了人们的极大兴趣。本文采用金属催化化学腐蚀的方法,在硅基底上制备了多孔硅纳米线薄膜,研究了腐蚀溶液H_2O_2的浓度和腐蚀时间对纳米线的长度、纳米孔的密度和发光性能的影响;研究了多孔硅纳米线的结构和表面化学状态,以及HNO3处理对多孔硅纳米线的成分、化学状态和发光性能的影响,探讨了多孔硅纳米线的形成机制和发光机制。通过把一维的硅纳米线结构与具有发光性能的多孔硅结构结合起来,为硅基光电子和光电化学器件的发展提供了新的发展空间。 3D纳米表面增强拉曼散射(SERS)基底材料由于其具有较强的拉曼增强系数和良好的重复性、稳定性而引起了广泛关注。本文采用NH4F-AgNO_3溶液体系制备了包覆Ag纳米颗粒的硅纳米线阵列薄膜,作为SERS基底其对罗丹明6G分子的拉曼增强系数达1.4105。利用湿态置换反应的原理在Cu片基底上制备具有三次枝晶臂结构的Ag树枝晶薄膜,,作为SERS基底对罗丹明6G分子的拉曼增强系数可达2.9107。湿化学法制备的这两种薄膜材料作为SERS基底对于定量检测痕量物质,以及检测的可重复性和标准化具有重要意义。
[Abstract]:In this paper, four wet chemical methods, electrochemical deposition, chemical liquid deposition, metal catalyzed chemical corrosion and substitution reaction deposition, were used to study the absorption layer materials of chalcopyrite thin film solar cells. Silicon nanowire thin films and surface-enhanced Raman scattering substrates were prepared. The structure and optical absorption, photoluminescence and surface-enhanced Raman scattering properties of the films were investigated. Chalcopyrite thin film materials and their substituted compounds are new thin film solar cell absorbent layer materials developed in -20s. It is considered to be one of the most promising thin film solar cell materials at present. In this paper, CuInSe2CISeand Cuins\\\? CISe and CIS thin films with chalcopyrite structure were obtained by vacuum annealing instead of toxic se or S process, and quasi-homogenous p-n junctions were formed on the surface of CISe films by Zn diffusion doping method. Thus, the structure of CISe thin film cell can be simplified and used to prepare cadmium free CISe thin film solar cell. One-dimensional nanomaterials have attracted great interest due to their unique structure, electrical, optical and mechanical properties. In this paper, porous silicon nanowire films were prepared on silicon substrates by metal catalyzed chemical etching. The effects of H _ 2O _ 2 concentration and corrosion time of corrosion solution on the length, density and luminescence properties of nanowires, the structure and surface chemical state of porous silicon nanowires and the composition of porous silicon nanowires treated with HNO3 were studied. The formation mechanism and luminescence mechanism of porous silicon nanowires are discussed by combining one-dimensional silicon nanowires with porous silicon structures with luminescent properties. It provides a new development space for the development of silicon based photoelectron and photoelectrochemical devices. 3D surface-enhanced Raman scattering (SERS) substrate material has strong Raman enhancement coefficient and good repeatability. In this paper, silicon nanowire array films coated with Ag nanoparticles were prepared by using NH4F-AgNO_3 solution system. The Raman enhancement coefficient of Rhodamine 6G molecule on SERS substrate was 1.4105. The Ag dendritic thin films with cubic dendritic arm structure were prepared on Cu substrates using the principle of wet displacement reaction. The Raman enhancement coefficient of Rhodamine 6G molecule on SERS substrate can reach 2.9107. The two kinds of thin film materials prepared by wet chemical method are important for quantitative determination of trace substances, reproducibility and standardization of detection.
【学位授予单位】:清华大学
【学位级别】:博士
【学位授予年份】:2011
【分类号】:TB383.2

【参考文献】

相关期刊论文 前1条

1 席珍强,杨德仁,吴丹,张辉,陈君,李先杭,黄笑容,蒋敏,阙端麟;单晶硅太阳电池的表面织构化[J];太阳能学报;2002年03期



本文编号:1532873

资料下载
论文发表

本文链接:https://www.wllwen.com/shekelunwen/minzhuminquanlunwen/1532873.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户784d0***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com