溶液法制备ZnO纳米微粒薄膜的低压电阻开关特性

发布时间：2018-03-12 09:22

本文选题：溶液法　切入点：ZnO纳米微粒薄膜　出处：《中国科学:物理学力学天文学》2017年10期 　论文类型：期刊论文

【摘要】：电阻开关随机存储器是一种有望应用于下一代非易失性存储器的新型存储器件,而ZnO是一种可应用于低电压低能耗电阻开关随机存储器的过渡金属氧化物.我们利用溶液法在40°C低温下制备获得粒径约为7 10 nm的ZnO纳米微粒,然后在优化制备条件下旋涂获得表面平整致密的n型ZnO纳米微粒薄膜.利用紫外-可见光吸收谱推算出ZnO纳米微粒薄膜的光学带隙宽度约为3.34 eV.ITO/ZnO/Al电容器结构的电流-电压曲线具有优良的双极性电阻开关特性:置/复位电压低至±0.2 V;在0.18 V的读取电压下可获得大于100的高/低电阻值比.电场作用下薄膜中ZnO分子发生电化学还原/氧化反应,导致薄膜中富余Zn原子组成的导电细丝周期性导通/截断,从而使得ZnO薄膜表现出电阻开关特性.
[Abstract]:Resistive switched random access memory (RRAM) is a new type of memory device which is expected to be used in the next generation of nonvolatile memory. ZnO is a transition metal oxide which can be used in low-voltage and low-energy resistive switch random access memory (RRAM). We prepared ZnO nanoparticles at low temperature of 40 掳C by solution method, and the size of ZnO nanoparticles was about 7 ~ 10 nm. Then, under optimized preparation conditions, n-type ZnO nanoparticle thin films with flat and compact surface were obtained by spin-coating. The optical band gap width of ZnO nanoparticle films was estimated to be about 3.34 eV.ITO/ZnO/Al capacitor structure by UV-Vis absorption spectroscopy. The current-voltage curve has excellent characteristics of bipolar resistor switch: the setting / reset voltage is as low as 卤0.2V, and the high / low resistance ratio greater than 100 can be obtained at the reading voltage of 0.18V. the electrolysis of ZnO molecules in the film under the action of electric field is achieved. Study reduction / oxidation reaction, This leads to the periodic conduction / truncation of conducting filaments composed of surplus Zn atoms in the thin films, which makes the ZnO thin films exhibit resistance switching characteristics.
【作者单位】：西南大学物理科学与技术学院;
【基金】：国家自然科学基金(编号:11274257) 重庆市自然科学基金(编号:cstc2014jcyjA0029) 中央高校基本科研业务费专项资金(编号XDJK2017D139)资助
【分类号】：TN304.21;TP333

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