超声喷雾热解法制备ZnO薄膜及其性能研究

发布时间：2018-03-12 12:33

  本文选题：氧化锌薄膜　切入点：超声喷雾热解法　出处：《大连工业大学》2011年硕士论文　论文类型：学位论文

【摘要】：本文介绍了ZnO的基本性质及其应用，论述了ZnO薄膜的制备方法及原理，综述了ZnO薄膜研究的最新进展。着重介绍ZnO及其掺杂薄膜在节能镀膜玻璃和薄膜太阳电池方面的应用，概括阐述了低辐射镀膜玻璃和薄膜太阳电池用绒面结构ZnO透明导电薄膜(ZnO-TCO)的发展概况、应用原理及常用的制备方法等。 本实验以六水合硝酸锌（Zn(NO_3)_26H_2O）水溶液作为前驱体，使用自制的超声喷雾热解装置在玻璃衬底上制备得到ZnO薄膜，利用X-射线衍射仪(XRD)、扫描电子显微镜（SEM)、表面形貌测量仪（DEKTAK6M）、紫外-可见光光谱仪(UV-Vis Spectrometer）等测试手段对ZnO薄膜的微观结构和光学性能进行表征。本实验研究了各种生长条件，例如前驱物溶液中Zn~(2+)浓度、沉积时间和衬底温度等工艺参数对ZnO薄膜结构和性能的影响。实验结果表明，，适宜的衬底温度、前驱体中Zn~(2+)浓度及合理的退火制度是制备出具有优良的均匀性和致密性薄膜的关键因素。温度上升有利于制备出c轴取向生长的ZnO薄膜，在500℃时，可以沉积出高质量c轴择优取向的ZnO薄膜。当前驱体溶液的浓度从0.1M增加到0.3M时，ZnO薄膜的结晶性能越来越好，c轴取向性也越来越大。但过高的前驱体溶液浓度和衬底温度却会降低薄膜的致密性。通过对紫外-可见光谱的分析，发现ZnO薄膜可见光区的透过率同ZnO的微观结构变化有关。在衬底温度为500℃、前驱体溶液浓度为0.3M、沉积镀膜时间30min、退火温度500℃、退火时间60min条件下制备出的薄膜均匀致密，同时也具有良好的可见光透过率，可以达到90%，而在退火温度为600℃时，薄膜具有较退火温度为500℃时更加显著地c轴择优取向，但由于薄膜表面氧空位缺陷的增多，使得透过率降为80%左右。
[Abstract]:In this paper, the basic properties and applications of ZnO are introduced, the preparation methods and principles of ZnO thin films are discussed, and the latest progress in the study of ZnO thin films is reviewed. The applications of ZnO and its doped films in energy-saving coating glass and thin film solar cells are emphatically introduced. The development, application principle and common preparation methods of ZnO transparent conductive thin film for low radiation coated glass and thin film solar cells are summarized. In this experiment, ZnO thin films were prepared on glass substrates with zinc nitrate hexahydrate (Zno _ 3) no _ 3H _ 2O _ (2) solution as precursor and a self-made ultrasonic spray pyrolysis device was used to prepare ZnO thin films on glass substrates. The microstructure and optical properties of ZnO thin films were characterized by means of X-ray diffractometer, scanning electron microscope (SEM), surface topography analyzer (DEKTAK6MN) and UV-Vis spectrometer (UV-Vis spectrometer). For example, the effects of the concentration of Zn~(2 in precursor solution, deposition time and substrate temperature on the structure and properties of ZnO thin films. The concentration of Zn~(2 in the precursor and the reasonable annealing system are the key factors for the preparation of ZnO thin films with excellent homogeneity and compactness. The increase of temperature is beneficial to the preparation of c-axis oriented ZnO films, and at 500 鈩

本文编号：1601583