玻璃基ZnO基薄膜的喷雾热分解法制备和表征

发布时间：2018-03-20 11:15

  本文选题：ZnO薄膜　切入点：光电性能　出处：《武汉理工大学》2010年硕士论文　论文类型：学位论文

【摘要】：ZnO是一种宽带隙的半导体材料,禁带宽度为3.37eV。透明导电ZnO薄膜是一种n型半导体,这是因为在薄膜的制备过程中,Zn和O的结合并不符合化学计量比,而是形成的一种缺氧的状态。ZnO可以在很宽范围内调节和控制,不同条件下生成的薄膜具有不同的功能。在ZnO薄膜中掺入铝、铟、氟等杂质,能有效地提高薄膜的电导率,改善其性能。掺杂ZnO薄膜有很好的导电性和透光性,其中AZO薄膜已成为制备光电器件理想材料,是近年来研究热点之一。 本文以乙酸锌为前躯体,AlCl3、InCl3为掺杂剂,在玻璃基板上采用喷涂热分解法制备掺杂ZnO透明导电薄膜。通过试验确定掺杂元素、掺杂浓度、基板温度、初始溶液中乙酸锌浓度、喷枪与基板距离等因素对ZnO薄膜性能的影响,找到最佳的工艺参数。制备出满足太阳能电池制程要求的ZnO基透明导电薄膜。在试验中不断改进Spray pyrolysis设备,得到满足工业化生产ZnO基薄膜的生产设备。 用紫外-可见光谱(UV-Vis)测试了膜层的透射率和吸收率,计算了薄膜的光学常数：折射率,光学带隙和膜层的厚度；用高倍显微镜观察了薄膜的表面形貌；研究了喷涂工艺对薄膜表面形貌的影响；用四探针法测试了薄膜的方块电阻；用XRD研究了薄膜的晶体结构。结果表明： (1)基板温度是影响薄膜的结构和性能重要因素之一,利用喷涂热分解法在550℃下,当In掺杂量为1%时,制备出薄膜达到了最小电阻率为3.5×10-3Ωm,在可见光区域(400-800 nm)的透射率都在80%左右,薄膜的光学带隙为3.24eV的掺杂ZnO薄膜； (2)喷涂热分解法制备出的ZnO薄膜样品为六方钎锌矿多晶结构,薄膜样品沿(002)面上择优生长,随着In掺杂量的增加薄膜晶体结构由六方晶系向斜六方晶系转变。但是(002)衍射峰最强,最为尖锐。当In掺杂量大于1%时,薄膜出现新的结构InAlO3(ZnO)17结构出现； (3)喷涂热分解法制备的In掺杂ZnO薄膜的最小电阻率为8.0×10-5Ωm比Al掺杂ZnO薄膜的最小电阻率3.5×10-3Ωm低出两个数量级；而ZnO薄膜的透过率在微量掺杂时,不受掺杂元素的影响。因此在喷涂热分解工艺中In元素比Al元素更适合作为掺杂,用于制备高性能ZnO薄膜。
[Abstract]:ZnO is a wide band gap semiconductor material with a band gap of 3.37 EV. The transparent conductive ZnO film is an n-type semiconductor because the combination of Zn and O does not conform to stoichiometric ratio. However, the anoxic state of ZnO can be adjusted and controlled in a wide range. The films formed under different conditions have different functions. Adding impurities such as aluminum, indium and fluorine into ZnO thin films can effectively improve the conductivity of the films. The doped ZnO thin films have good conductivity and transmittance, among which AZO thin films have become an ideal material for photovoltaic devices, and have become one of the research hotspots in recent years. In this paper, doped ZnO transparent conductive films were prepared on glass substrate with zinc acetate as precursor AlCl3 / InCl3 as dopant. Doping elements, doping concentration, substrate temperature and zinc acetate concentration in initial solution were determined by experiments. The influence of the distance between gun and substrate on the performance of ZnO thin film was obtained. The best process parameters were found. The transparent conductive film based on ZnO was prepared to meet the requirements of solar cell process. The Spray pyrolysis equipment was continuously improved in the experiment. The equipment for industrial production of ZnO-based films was obtained. The transmittance and absorptivity of the films were measured by UV-Vis. the optical constants such as refractive index, optical band gap and film thickness were calculated, and the surface morphology of the films was observed by high power microscope. The effect of spraying process on the surface morphology of the film was studied, the square resistance of the film was measured by four-probe method, and the crystal structure of the film was studied by XRD. The results show that:. The substrate temperature is one of the important factors affecting the structure and properties of the films. The spray thermal decomposition method is used at 550 鈩，

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