MOCVD法制备Sb掺杂ZnO薄膜及其光电特性的研究

发布时间：2018-03-26 11:04

  本文选题：ZnO　切入点：MOCVD　出处：《大连理工大学》2010年硕士论文

【摘要】： ZnO是一种在蓝光及紫外光电器件领域极有应用前途的直接带隙宽禁带半导体材料。其室温下激子束缚能为60 meV,禁带宽度为3.37 eV,单晶中的电子霍尔迁移率高达200cm2V-1·s-1。ZnO的优良特性使其成为一种制备室温或更高温度下短波长、低阈值、高效率半导体光电器件的理想材料。目前制约着ZnO在LED、LD领域发展的一个关键因素就是稳定、高质量、可重复的p型ZnO的制备还存在着问题。本论文就是针对这一问题,在使用MOCVD工艺对ZnO进行Sb掺杂方面进行了相关研究。主要的工作包括如下两个部分： (1)为研究衬底温度对MOCVD法Sb掺杂ZnO的影响,在c面蓝宝石衬底上,在500℃、550℃、600℃这三个温度点上分别对ZnO进行了Sb掺杂,并对薄膜进行了X射线衍射(XRD),霍尔(Hall)测试和光致发光(PL)测试。测试结果表明,温度在500℃至550℃之间时,ZnO薄膜的结晶质量随着衬底温度的升高而提高,当衬底温度进一步升高时,结晶质量开始下降。Hall测试和PL谱测试结果表明,衬底温度为550℃的样品具有最好的电学和光学性质。 (2)为研究Sb源流量对MOCVD法Sb掺杂ZnO的影响,结合上面的实验结果,设定衬底温度为550℃,同样选择c面蓝宝石,分别在Sb源载气流量0.2sccm、0.3 sccm、0.4 sccm这三个条件下对ZnO进行了Sb掺杂,并对薄膜进行了X射线衍射(XRD),霍尔(Hall)测试和光致发光(PL)测试。经过综合对比发现掺杂源流量在0.4 sccm时,所生长的薄膜性能较为优异,平均晶粒尺寸最大,其XRD衍射谱ZnO(002)衍射峰和室温PL谱紫外发射峰的FWHM值最小,分别为0.171°和112.3 meV,样品为p型导电且空穴浓度和迁移率较高。
[Abstract]:ZnO is a promising direct band gap wide band gap semiconductor material in the field of blue light and ultraviolet optoelectronic devices. The exciton binding energy is 60 MEV at room temperature, the band gap width is 3.37 EV, and the electron Hall mobility in single crystal is as high as 200cm2V-1 s-1.ZnO. Its excellent properties make it a kind of short wavelength for preparation at room temperature or higher. Low threshold, high efficiency semiconductor optoelectronic devices ideal material. At present, one of the key factors restricting the development of ZnO in the field of LED LD is the problem of stable, high quality and repeatable p-type ZnO. The research on SB doping in ZnO by MOCVD process is carried out. The main work includes the following two parts:. In order to study the effect of substrate temperature on ZnO doped with SB by MOCVD method, SB doped ZnO was prepared on c plane sapphire substrate at 500 鈩，

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