磁控溅射法制备Al_xCoCrFeNi高熵合金薄膜的微观组织和力学性能研究

发布时间：2018-03-27 23:01

本文选题：Al_xCoCrFeNi高熵合金薄膜　切入点：微观组织　出处：《功能材料》2017年06期

【摘要】：利用磁控溅射工艺制备了不同Al含量的(0~20%(原子分数))AlCoCrFeNi高熵合金薄膜,研究了Al含量对AlCoCrFeNi高熵合金薄膜微观结构和力学性能的影响。结果表明,Al元素的加入,使得原CoCrFeNi四元合金薄膜中的(200)峰消失,Al_xCoCrFeNi薄膜呈现出(111)晶面的择优生长取向。Al_xCoCrFeNi合金薄膜形成了面心立方单一均匀的固溶体。Al元素的加入起到了固溶强化的作用,使Al_xCoCrFeNi薄膜硬度相对于CoCrFeNi合金薄膜整体提高了1~2GPa。当Al含量为0.8时,薄膜的柱状晶宽度达到最小,Al_(0.8)CoCrFeNi薄膜在Hall-Petch关系作用下硬度显著增加,达到最大值18.7GPa。
[Abstract]:AlCoCrFeNi high entropy alloy thin films with different Al content were prepared by magnetron sputtering. The effects of Al content on the microstructure and mechanical properties of AlCoCrFeNi high entropy alloy films were studied. The peak of Al _ XCoCrFeNi film disappeared from the original CoCrFeNi quaternary alloy thin film. The preferred growth orientation of Al _ xCoCrFe _ Ni thin film was presented. The Al _ xCoCrFe _ Ni alloy film formed a single solid solution with a uniform face-centered cube. The addition of Al element played a role of solution strengthening. The hardness of Al_xCoCrFeNi film is increased by 1 ~ 2 GPA compared with that of CoCrFeNi alloy film as a whole. When Al content is 0. 8, the columnar crystal width of Al_xCoCrFeNi film reaches the minimum value. The hardness of CoCrFeNi thin film increases significantly under the action of Hall-Petch, reaching the maximum value of 18.7 GPa.
【作者单位】：上海理工大学材料科学与工程学院;
【基金】：国家自然科学基金资助项目(51471110)
【分类号】：TB383.2;TG139

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