脉冲激光沉积后硒化法制备CIGS薄膜

发布时间：2018-04-14 09:03

  本文选题：CIGS薄膜 + PLD　； 参考：《内蒙古大学》2011年硕士论文

【摘要】：太阳电池作为发展最快的清洁能源,具有无噪声、无污染、不受地域限制、利用成本低等特点,近几年来薄膜电池得到了高速发展。以CuInGaSe2(简称CIGS)为吸收层的薄膜太阳电池是在玻璃或者其它廉价衬底上沉积6层以上化合物半导体和金属薄膜材料,薄膜总厚度约3-4μm。该电池成本低、性能稳定、抗辐射能力强,其光电转换效率高,被称为最有前途的廉价太阳电池之一。 对CIGS吸收层薄膜的研究,本论文主要包括两方面的内容：(1)用脉冲激光沉积(PLD)法制备了不同成分比例的CIG预制膜,在硒化条件相同的情况下制备了CIGS薄膜,系统地研究了激光能量和溅射次数等工艺参数对薄膜结构及形貌的影响；(2)用脉冲激光沉积(PLD)法制备了成分比例相同的CIG预制膜,在不同的硒化条件下制备了CIGS薄膜,系统地研究了热处理温度等工艺参数对薄膜结构、形貌及光学性能的影响。 采用台阶仪、X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDS)、紫外分光光度计等对制备的薄膜进行了检测,分析结果表明：(1)设定CuGa靶和In靶溅射能量分别为350和250mJ,靶衬间距为35mm,能够避免In聚集现象；(2)CuGa靶和In靶溅射次数分别为5和6万次,硒化后制备出的CIGS薄膜中Cu、In、Ga的原子含量为n_(Cu)/(nIn+nGa)=0.98,nGa/(nIn+nGa)=0.28,这种略微贫Cu和富Se的组分比能够制备出高质量CIGS薄膜；(3)硒化温度250℃、硒化时间60min、热处理温度550℃、热处理时间30min时制备的薄膜厚度约为1.3μm；颗粒轮廓清晰,大小均匀,尺寸达到1μm；薄膜表面非常致密,粗糙度和起伏较小,而且与衬底结合较为紧密；薄膜在可见及红外区都有很好的光吸收特性,形成单一黄铜矿结构。
[Abstract]:As the fastest developing clean energy, solar cells have the characteristics of no noise, no pollution, no region restriction, low utilization cost and so on. In recent years, thin film batteries have been developed at a high speed.The thin film solar cells with CuInGaSe2 (CIGS) as the absorption layer are deposited on glass or other cheap substrates with more than 6 layers of compound semiconductors and metal thin films, the total thickness of which is about 3-4 渭 m.The cell has the advantages of low cost, stable performance, strong radiation resistance and high photoelectric conversion efficiency, so it is regarded as one of the most promising cheap solar cells.The main contents of this thesis are as follows: (1) CIG films with different compositions were prepared by pulsed laser deposition. CIGS thin films were prepared under the same conditions of selenization.The effects of laser energy and sputtering times on the structure and morphology of CIG films were studied systematically. The CIG films with the same composition were prepared by pulsed laser deposition. The CIGS films were prepared under different selenization conditions.The effects of heat treatment temperature on the structure, morphology and optical properties of the films were studied systematically.The thin films were examined by step X ray diffractometer, scanning electron microscope (SEM), energy dispersive spectrometer (EDS), ultraviolet spectrophotometer and so on.The results show that the sputtering energy of CuGa target and in target are 350 and 250mJ, respectively, and the distance between them is 35mm, which can avoid the phenomenon of in aggregation. The sputtering times of in target and in target are 5 000 and 60 000 times, respectively.The atomic content of CIGS thin films prepared by selenization is 0.28 n_(Cu)/(nIn NGa0.98 nGaP / nGa0.28. The ratio of Cu and se rich components can be used to fabricate high quality CIGS thin films at 250 鈩，

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