溶胶—凝胶法制备NiO薄膜的光学特性研究

发布时间：2018-05-08 09:52

本文选题：氧化镍薄膜 + 溶胶-凝胶　；参考：《长春理工大学》2011年硕士论文

【摘要】：氧化镍是具有典型的3d电子结构的氧化物半导体,是一种p型半导体材料,禁带宽度是在3.6～4.0eV之间。因为氧化镍薄膜具有优良的光电特性,而被广泛应用于紫外探测器,电致变色器件,电池电极及电化学电容器等领域。氧化镍薄膜的制备方法有：磁控溅射、化学气相沉积、分子束外延、脉冲激光沉积等。这些方法设备昂贵,技术较复杂,不易于大面积的薄膜制备。目前发展的溶胶-凝胶法则成本低廉、工艺简单、成分均匀,适用于多元掺杂薄膜的制备。本论文采用溶胶-凝胶法,用不同浓度的溶液,在不同热处理温度下制备了多组NiO薄膜。为了调节NiO薄膜的禁带宽度,使其更好的应用于紫外探测器领域,还制备了掺Mg的NiO薄膜,并采用紫外-可见(UV-VIS)分光光度计,X射线衍射仪(XRD),原子力显微镜对所得薄膜进行测试,研究了薄膜的结构,光学,表面形貌等特性。
[Abstract]:Nickel oxide is a typical oxide semiconductor with 3D electronic structure. It is a p-type semiconductor material and its band gap is between 3.6~4.0eV. Nickel oxide thin films are widely used in ultraviolet detectors, electrochromic devices, battery electrodes and electrochemical capacitors because of their excellent photoelectric properties. The preparation methods include magnetron sputtering, chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition and so on. These methods are expensive in equipment, complex in technology and difficult to prepare large-area thin-film. The developed sol-gel rule is simple in cost, uniform in composition and suitable for the preparation of multicomponent doped films. In this paper, NiO thin films were prepared by sol-gel method with different concentrations of solution at different heat treatment temperatures. In order to adjust the band gap of NiO thin films and make them better used in the field of ultraviolet detectors, mg doped NiO thin films were prepared. The films were measured by UV-Vis spectrophotometer and X-ray diffractometer, and atomic force microscopy (AFM) was used to test the films. The structure, optics and surface morphology of the films were studied.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：TB383.2

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