MOCVD法制备氧化锌发光器件及薄膜晶体管的研究

发布时间：2018-05-15 10:23

  本文选题：金属有机化学气相沉积 + ZnO薄膜　； 参考：《吉林大学》2011年博士论文

【摘要】：氧化锌材料是一种直接带隙宽禁带半导体材料,其在固体照明、信息存储以及显示领域具有巨大的应用潜力。然而,高质量、稳定、可重复的p-ZnO薄膜的制备一直存在较大困难,使得ZnO基高效率紫外发光器件的研究进展缓慢。本论文采用MOCVD技术,围绕高质量ZnO薄膜的制备、ZnO的p型掺杂和ZnO基同质结、异质结发光二极管的制备等方面开展了相关的一系列工作。同时,在制备ZnO薄膜晶体管方面也进行了初步的研究。 本论文首先采用MOCVD生长技术在c面蓝宝石、GaN/Al2O3衬底上制备了ZnO薄膜,采用多种测试手段对制备的ZnO薄膜进行了表征分析,重点研究了生长温度以及锌氧比对薄膜结晶质量、形貌以及发光质量等方面的影响。通过实验得到了获得较高质量ZnO薄膜相对优化的生长条件。 其次介绍了针对两种v族元素As和P的不同掺杂方法。对于As元素,采用了GaAs夹层的掺杂技术,通过热扩散工艺制备了As掺杂的p型ZnO薄膜。对于P元素,采用了升华的方法,制备出P掺杂的p-ZnO。通过优化生长条件,得到了载流子浓度在1017cm-3量级的p-ZnO薄膜。 以前面As掺杂制备p型ZnO的研究为基础,在ITO玻璃衬底上制备出具有紫外电致发光特性的ZnO同质结LED；以P掺杂制备p型ZnO的研究为基础,在n-GaN/Al2O3衬底上制备了p-ZnO:P/n-GaN异质结构的ZnO基发光器件。此外,还在ITO玻璃衬底上制备了基于MIS结构的发光器件。三种器件结构均表现出明显的整流特性,实现了室温下的电致发光。其中,p-ZnO:P/n-GaN异质结构ZnO基发光器件,实现了室温电泵浦紫外光激射。 最后,采用MOCVD方法在ITO玻璃衬底表面制备了以MgO为绝缘介质的ZnO薄膜晶体管,优化后器件的开关比达到了105量级。
[Abstract]:However , high quality , stable and repeatable preparation of p - ZnO thin films has been difficult , so that the research progress of ZnO - based high - efficiency ultraviolet light - emitting devices has been slow . In this paper , the related series of work has been carried out on the preparation of high - quality ZnO thin films , the p - type doping of ZnO and the preparation of ZnO - based homogenous junctions and heterojunction light - emitting diodes .


ZnO thin films were prepared on c - plane sapphire and GaN / Al _ 2O _ 3 substrates by MOCVD growth technique . The effects of growth temperature and Zn / O ratio on the crystal quality , morphology and luminescence quality were studied .


A p - type ZnO thin film doped with As was prepared by thermal diffusion . The p - ZnO film doped p - ZnO was prepared by means of thermal diffusion . The p - ZnO film doped p - ZnO was prepared by means of thermal diffusion . The p - ZnO film with carrier concentration on the order of 1017cm - 3 was obtained by optimizing the growth conditions .


On the basis of the previous study on preparation of p - type ZnO , ZnO homojunction LED with ultraviolet electroluminescence characteristics was prepared on ITO glass substrate .
A p - ZnO : P / n - GaN heterostructure ZnO - based light - emitting device was prepared on an n - GaN / Al _ 2O _ 3 substrate . The light - emitting device based on MIS structure was fabricated on ITO glass substrate .


Finally , a ZnO thin film transistor with MgO as an insulating medium is prepared on the surface of ITO glass substrate by MOCVD method , and the switching ratio of the optimized device is on the order of 105 .

【学位授予单位】：吉林大学
【学位级别】：博士
【学位授予年份】：2011
【分类号】：TN304.055;TN321.5

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