离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性（英文）

发布时间：2018-07-07 16:43

本文选题：离子束溅射沉积 + 碳化锗　；参考：《红外与毫米波学报》2016年02期

【摘要】：采用离子束溅射法通过在CH4和Ar的混合气体中溅射Ge靶材制备碳化锗(Ge_(1-x)C_x)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8GPa.由于薄膜中的Ge-C键代替了C-C键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.
[Abstract]:GE (1-x) C _ x (GE _ (1-x) C _ x) thin films were deposited by sputtering GE targets in Ch _ 4 and ar mixtures by ion beam sputtering. The surface morphology, chemical structure, optical and mechanical properties of the films were investigated by atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and nano-indentation. At the same time, the relationship between the beam pressure of ion source and the properties of thin films was analyzed. The results show that the roughness decreases with the increase of beam pressure. The films prepared under higher beam pressure contain less C elements and more Ge-C bonds. The thin films have excellent infrared optical and mechanical properties. The film has good transmittance. C element content decreases with the increase of beam pressure, which leads to the increase of refractive index in the process of increasing beam pressure from 300V to 800V. The hardness of the film is greater than 8 GPA. Because the Ge-C bond replaces C-C bond and C-Hn bond, the hardness of the film increases with the increase of the beam pressure.
【作者单位】：天津大学电子信息工程学院;中国航天科工飞航技术研究院天津津航技术物理研究所天津市薄膜光学重点实验室;
【基金】：Supported by National Natural Science Foundation of China(61235011) the Science and Technology Commission of Tianjin Municipality(13JCYBJC17300,12JCQNIC01200)
【分类号】：O484.4

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