热壁外延法制备高取向PbTe薄膜及其结构和性质的研究

发布时间：2018-07-10 11:22

本文选题：热壁外延 + PbTe膜　；参考：《吉林大学》2010年硕士论文

【摘要】： 本文采用HWE(Hot Wall Epitaxy)方法,在Si衬底上生长了PbTe薄膜,通过改变衬底温度和进行掺杂在Si衬底上制备出了结构不同的PbTe薄膜。使用多种方法研究了薄膜的微观结构,讨论了掺杂对薄膜生长的影响,n-PbTe/p-Si异质结的I-V性质表明,具有很好的整流特性。同时首次在金刚石衬底上生长出了PbTe薄膜,分析了PbTe薄膜的结构及生长机制,制备了n-PbTe/p-diamond异质结,测量其整流特性,并给出了异质结的能带结构图。
[Abstract]:In this paper, PbTe thin films were grown on Si substrates by HWE (Hot Wall Epitaxy) method. PbTe thin films with different structures were prepared by changing the substrate temperature and doping on Si substrates. The microstructure of the films was studied by various methods. The influence of doping on the growth of the films was discussed. The I-V properties of n-PbTep-Si heterostructures showed that the films had good rectifying properties. At the same time, PbTe thin films were grown on diamond substrates for the first time. The structure and growth mechanism of PbTe thin films were analyzed. N-PbTep-diamond heterostructures were prepared, their rectifying characteristics were measured, and the energy band structure diagrams of the heterostructures were given.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：O484.1

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