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反应温度对卤素刻蚀法制备碳化物衍生碳涂层的影响

发布时间:2018-07-28 12:48
【摘要】:近些年来,碳化物衍生碳以其独特的性能被广泛应用在气体存储、超级电容器、催化剂载体和摩擦涂层等方面.卤化法以成本低、制备工艺简单等特点成为制备衍生碳涂层的热点.本文以SiC陶瓷基体为前驱体,通过高温氯化处理工艺在SiC表面制备碳化物衍生碳涂层,并研究了反应温度与其摩擦学性能之间的关系.研究结果表明:在1 175℃下保温2 h所制备的SiC-CDC涂层表面光滑平整、硬度最高、且与基体的结合强度最好.此时SiC-CDC涂层的干摩擦系数最小,耐磨性最强,具有良好的摩擦学性能.氯气刻蚀反应制备SiC-CDC涂层可为工业上应用衍生碳涂层提供理论和技术支持.
[Abstract]:In recent years, Carbide derived carbon has been widely used in gas storage, supercapacitors, catalyst carriers and friction coatings due to its unique properties. Halogenation has become a hot spot in the preparation of derived carbon coatings because of its low cost and simple preparation process. Carbide derived carbon coatings were prepared on the surface of SiC by chlorination at high temperature. The relationship between reaction temperature and tribological properties was studied. The results show that the surface of SiC-CDC coating prepared at 1 175 鈩,

本文编号:2150194

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