PECVD法制备掺磷非晶硅薄膜及其结构和性能的研究
发布时间：2018-08-01 14:28
【摘要】：当前,非晶硅薄膜太阳能电池以其成本低,工艺简单,能量回收时间短等优点得到了广泛关注。根据衬底状况和各层沉积顺序的不同,非晶硅薄膜太阳电池可分为p-i-n和n-i-p两种结构。n层和p层共同构建非晶硅薄膜太阳能电池的内建电场,两层直接影响电池的开路电压(Voc),短路电流密度(Jsc),所以n层对整个电池的性能起着重要的作用。 本文通过射频等离子增强化学气相沉积(：RF-PECVD),以氢稀释的硅烷(SiH4)为反应气体,磷烷(PH3)为掺杂气体,制备了n型氢化非晶硅(a-Si:H)薄膜。本论文研究磷掺杂浓度,辉光放电功率,衬底温度对非晶硅薄膜结构和光电性能的影响,薄膜微结构通过XRD和拉曼散射光谱进行表征,薄膜透过率通过紫外可见光分光度计来测试,折射率和消光系数通过NKD-7000W光学薄膜系统拟合得出,暗电导率通过高阻仪测试。结果表明：在本实验条件下沉积的硅薄膜都是非晶态；非晶硅薄膜折射率在R=0.8%(R=PH3/SiH4)时最大,消光系数随着掺杂浓度增加而增大,暗电导率随着磷掺杂浓度先增加后降低,薄膜表面粗糙度基本不受掺杂浓度影响；非晶硅薄膜折射率随着辉光功率增大先增加后减小,功率为70W达到最大值3.7,暗电导率在100W最大,最大值为9.32×10-3S/cm；衬底温度在60～300℃内变化,非晶硅薄膜暗电导率是先上升后下降,200℃时电导率值达到最大,为1.88×10-2S/cm。
[Abstract]:At present, amorphous silicon thin film solar cells have been paid more and more attention due to their advantages of low cost, simple process and short energy recovery time. According to the substrate condition and the different deposition sequence of each layer, the amorphous silicon thin film solar cell can be divided into two kinds of structure: p-i-n and n-i-p. N layer and p layer together construct the built-in electric field of amorphous silicon thin film solar cell. Two layers directly affect the open circuit voltage (Voc), short circuit current density (Jsc), so n layer plays an important role in the performance of the whole battery. N type hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with hydrogen diluted silane (SiH4) as reaction gas and phosphorane (PH3) as doping gas. In this paper, the effects of phosphorus doping concentration, glow discharge power and substrate temperature on the structure and photoelectric properties of amorphous silicon thin films were investigated. The microstructure of the films was characterized by XRD and Raman scattering spectra. The transmittance of the film was measured by UV-Vis spectrophotometer, the refractive index and extinction coefficient were fitted by NKD-7000W optical film system, and the dark conductivity was measured by high resistivity instrument. The results show that all the Si films deposited in this experiment are amorphous, the refractive index of amorphous silicon films is the largest at R _ (0.8%) (R=PH3/SiH4), the extinction coefficient increases with the increase of doping concentration, and the dark conductivity increases first and then decreases with the concentration of phosphorus doping. The surface roughness of amorphous silicon films is not affected by doping concentration, the refractive index of amorphous silicon films increases first and then decreases with the increase of glow power, the maximum power is 70 W and the maximum dark conductivity is 100 W, and the maximum value is 9.32 脳 10 ~ (-3) S / cm; The dark conductivity of amorphous silicon thin films increases first and then decreases at 200 鈩，
本文编号：2157875
[Abstract]:At present, amorphous silicon thin film solar cells have been paid more and more attention due to their advantages of low cost, simple process and short energy recovery time. According to the substrate condition and the different deposition sequence of each layer, the amorphous silicon thin film solar cell can be divided into two kinds of structure: p-i-n and n-i-p. N layer and p layer together construct the built-in electric field of amorphous silicon thin film solar cell. Two layers directly affect the open circuit voltage (Voc), short circuit current density (Jsc), so n layer plays an important role in the performance of the whole battery. N type hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with hydrogen diluted silane (SiH4) as reaction gas and phosphorane (PH3) as doping gas. In this paper, the effects of phosphorus doping concentration, glow discharge power and substrate temperature on the structure and photoelectric properties of amorphous silicon thin films were investigated. The microstructure of the films was characterized by XRD and Raman scattering spectra. The transmittance of the film was measured by UV-Vis spectrophotometer, the refractive index and extinction coefficient were fitted by NKD-7000W optical film system, and the dark conductivity was measured by high resistivity instrument. The results show that all the Si films deposited in this experiment are amorphous, the refractive index of amorphous silicon films is the largest at R _ (0.8%) (R=PH3/SiH4), the extinction coefficient increases with the increase of doping concentration, and the dark conductivity increases first and then decreases with the concentration of phosphorus doping. The surface roughness of amorphous silicon films is not affected by doping concentration, the refractive index of amorphous silicon films increases first and then decreases with the increase of glow power, the maximum power is 70 W and the maximum dark conductivity is 100 W, and the maximum value is 9.32 脳 10 ~ (-3) S / cm; The dark conductivity of amorphous silicon thin films increases first and then decreases at 200 鈩，
本文编号：2157875
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