种子层及掺杂浓度对溶胶-凝胶法制备ZnO∶Al薄膜光电性能的影响

发布时间：2018-08-01 17:46

【摘要】：本文采用溶胶-凝胶法以提拉的方式在普通玻璃基底上制备出n型掺杂具有优良光电性能的氧化锌掺铝(AZO)薄膜,并以磁控溅射AZO薄膜为种子层引导液相法所制备AZO薄膜生长。Al掺杂浓度区间为0.25at%~5.00at%。通过X射线衍射仪、场发射扫描电子显微镜、轮廓仪、方块电阻测试仪、霍尔效应测试仪、紫外-可见-红外分光光度计分别研究了薄膜物相、微观结构、膜厚及光电性能,进一步分析了Al掺杂浓度、种子层对薄膜光电性能的影响。结果表明:经10次提拉所制备薄膜可见光透过率85%以上。Al掺杂浓度、种子层的引入对AZO薄膜的光电性能有重要影响。无种子层时,掺杂浓度为0.50at%的AZO薄膜在5%H2、95%N2还原气氛下于550℃保温60 min得到最优电学性能,方块电阻约为166Ω/□,电阻率约为1.99×10-3Ω·cm;预镀AZO种子层所制备薄膜方块电阻下降到约42Ω/□,电阻率下降到约7.56×10-4Ω·cm。
[Abstract]:In this paper, a sol-gel method is used to prepare n doped aluminum (AZO) doped aluminum (AZO) thin film with excellent photoelectric properties on the ordinary glass substrate, and the.Al doping concentration range of the AZO film is prepared by the magnetron sputtering AZO film as the seed layer guided liquid phase method. The field emission scanning is passed by the X ray diffractometer through the X ray diffractometer. Electron microscopy, profilometer, block resistance tester, Holzer effect tester, ultraviolet visible infrared spectrophotometer respectively studied the phase, microstructure, film thickness and photoelectrical properties of the film, and further analyzed the Al doping concentration and the effect of the seed layer on the photoelectric properties of the film. The results showed that the visible light transmission of the film was prepared by 10 times. The introduction of seed layer has an important effect on the photoelectric properties of AZO film. When no seed layer is seedless, the AZO film with the doping concentration of 0.50at% is optimum electrical properties in 5%H2,95%N2 reduction atmosphere at 550 C and 60 min, the resistance of the block is about 1.99 * 10-3 Omega cm, the resistance rate is about 1.99 * 10-3 Omega cm, and the pre plated AZO seed layer is made. The film resistance of the film is reduced to about 42 ohm / cm., and the resistivity decreases to about 7.56 * 10-4 ohm.
【作者单位】：蚌埠玻璃工业设计研究院浮法玻璃新技术国家重点实验室;
【基金】：国家“973”计划(2012CB724608) 安徽省自然科学基金(1408085MKL67) 安徽省科技攻关计划项目(1301021015)
【分类号】：O484.4

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