RF-PECVD法制备碳纳米管的工艺研究
发布时间：2018-08-07 07:06
【摘要】： 碳纳米管具有极其独特的力学、热学和电学性能,自其1991年被Lijima发现以来,受到广泛关注。近年来,由于碳纳米管具有优异的场发射性能,期望将碳纳米管的巨大潜力应用在场效应晶体管、场发射显示器、单电子晶体管等纳米电子器件以及集成电路中作为互连线等方面。但要想制备这些电子器件,碳纳米管的合成温度必须低于基板材料所能承受的温度。例如,碳纳米管作为场致电子发射源,应用于冷阴极平面显示器上,那么纳米碳管的合成温度应低于显示器玻璃的转变温度550℃。但是,目前CNTs的生长温度一般都在800~1000℃,远高于集成电路中常用金属Cu的熔点和显示器玻璃的转变温度。所以即便在这种高温条件下原位制备出了单个的CNTs纳电子器件,也很难实现与传统微电子工艺的高度兼容。等离子体增强化学气相沉积法在低温合成纳米碳管方面具有很大的优势。 本文研究碳纳米管的生长和结构特性,所做的工作有以下几方面: 1、利用磁控溅射法在Si衬底上制备Ni薄膜,然后再在制得的Ni膜上用PECVD法制备碳纳米管薄膜。研究了衬底温度对薄膜性能的影响,采用SEM和Raman对薄膜进行了分析。 2、利用离子束溅射法在Si衬底上制备Fe薄膜,然后再在制得的Fe膜上用PECVD法制备碳纳米管薄膜。研究了衬底温度及射频功率对薄膜性能的影响,分析了样品的SEM、HRTEM、Raman等测试图。 3、利用磁控溅射法在Cu衬底上制备Ni薄膜,然后再在制得的Ni膜上,在特定的反应条件下,用PECVD法制备碳纳米管薄膜。采用SEM和Raman对薄膜进行了初步分析。 采用一系列测试手段分析了碳纳米管薄膜的生长和结构特性,结果表明,衬底温度700~800℃的条件是比较适合碳纳米管生长的。
[Abstract]:Carbon nanotubes (CNTs), which have unique mechanical, thermal and electrical properties, have attracted wide attention since their discovery by Lijima in 1991. In recent years, due to the excellent field emission properties of carbon nanotubes, it is expected that the great potential of carbon nanotubes will be applied to field-effect transistors, field emission displays. Nanoscale electronic devices such as single electron transistors and integrated circuits are used as interconnects. However, to fabricate these electronic devices, the synthesis temperature of carbon nanotubes must be lower than the substrate material can withstand. For example, when carbon nanotubes (CNTs) are used as field-induced electron emitters in cold cathode flat displays, the synthesis temperature of CNTs should be lower than the transition temperature of glass at 550 鈩，
本文编号：2169255
[Abstract]:Carbon nanotubes (CNTs), which have unique mechanical, thermal and electrical properties, have attracted wide attention since their discovery by Lijima in 1991. In recent years, due to the excellent field emission properties of carbon nanotubes, it is expected that the great potential of carbon nanotubes will be applied to field-effect transistors, field emission displays. Nanoscale electronic devices such as single electron transistors and integrated circuits are used as interconnects. However, to fabricate these electronic devices, the synthesis temperature of carbon nanotubes must be lower than the substrate material can withstand. For example, when carbon nanotubes (CNTs) are used as field-induced electron emitters in cold cathode flat displays, the synthesis temperature of CNTs should be lower than the transition temperature of glass at 550 鈩，
本文编号：2169255
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