二步法制备绒面结构ZAO薄膜及其在非晶硅薄膜太阳电池前电极应用研究
发布时间：2018-09-05 20:43
【摘要】：氧化锌铝(ZAO)薄膜是六角纤锌矿结构(Wurzite hexagonal structure)的多晶体,为N型半导体薄膜材料。ZAO薄膜导电主要是靠掺杂的铝和氧空位作用提供电子。ZAO薄膜具有光学带隙宽(3.34eV),可见光透过率高,电阻率低的特点,是薄膜太阳电池透明电极的理想材料。 制备具有类金字塔绒面结构铝掺杂氧化锌(ZAO)薄膜,目前流行的做法是用MOCVD法和磁控溅射结合湿法刻蚀方法,前者设备昂贵成本高,而后者在刻蚀过程中不易控制。本论文采用二步法首先以石英为衬底,用溶胶-凝胶方法制备一层铝掺杂氧化锌(ZAO)薄膜,再用磁控溅射方法,在ZAO薄膜上低温溅射制备得到了绒面结构铝掺杂氧化锌(ZAO)薄膜,实现了绒面结构ZAO薄膜的廉价制备。 本文首先探索了溶胶-凝胶法在石英玻璃衬底上制备ZAO薄膜工艺条件对薄膜结晶性能的影响,获得制备自支撑ZAO薄膜的最佳工艺条件:溶液浓度为0.80mol/L;铝掺杂浓度为4at%;陈化时间为5天(120h);干燥温度为150℃,干燥时间为10min;预处理温度为300℃;退火温度为800℃;镀膜层数为8层;然后探索了用磁控溅射法在石英衬底上溅射沉积ZAO薄膜,通过对薄膜微结构、电阻率、表面形貌以及紫外可见光的透过率进行了分析,没有得到具有优良绒面结构的ZAO薄膜。结合以上两种方法我们设计了实验方案,利用二步法制备绒面结构的ZAO薄膜,以溶胶-凝胶法制备的薄膜作为诱导自支撑衬底,利用磁控溅射沉积一层薄膜,通过实验分析,得到了性能优良的绒面ZAO薄膜,四探针和紫外透射谱测试,绒面结构的ZAO薄膜电阻率为10-3?·cm量级、可见光透过率大于85%,表面形貌显示绒面结构均匀排布。 将具有绒面结构的ZAO薄膜应用于非晶硅薄膜太阳电池的前电极,发现电池性能与用FTO导电膜做前电极的电池有基本相近的效果,是一种具有陷光性能、能用于非晶硅太阳能薄膜电池透明导电膜的理想材料。有望替代FTO广泛运用于非晶硅太阳电池。
[Abstract]:Zinc oxide aluminum (ZAO) thin film is a polycrystal of hexagonal wurtzite structure (Wurzite hexagonal structure). The conduction of N-type semiconductor thin film. ZAO thin film mainly depends on the interaction of doped aluminum and oxygen vacancy. ZAO thin film has optical band gap width (3.34eV) and high visible light transmittance. The characteristic of low resistivity is the ideal material for transparent electrode of thin film solar cell. Aluminum-doped zinc oxide (ZAO) thin films with pyramidal suede structure have been prepared. At present, MOCVD method and magnetron sputtering combined with wet etching method are widely used. The former is expensive and the latter is difficult to control in the etching process. In this paper, a layer of Al-doped zinc oxide (ZAO) thin films was prepared by sol-gel method on quartz substrate, and then deposited on ZAO thin films by magnetron sputtering at low temperature. Aluminum-doped ZnO (ZAO) thin films with suede structure were prepared by magnetron sputtering. The cheap preparation of suede structure ZAO films was realized. In this paper, the effect of process conditions on the crystalline properties of ZAO thin films prepared on quartz glass substrates by sol-gel method was investigated. The optimum technological conditions for the preparation of self-supporting ZAO thin films were obtained as follows: solution concentration 0.80 mol / L; aluminum doping concentration 4 attic; aging time 5 days (120h); drying temperature 150 鈩，
本文编号：2225410
[Abstract]:Zinc oxide aluminum (ZAO) thin film is a polycrystal of hexagonal wurtzite structure (Wurzite hexagonal structure). The conduction of N-type semiconductor thin film. ZAO thin film mainly depends on the interaction of doped aluminum and oxygen vacancy. ZAO thin film has optical band gap width (3.34eV) and high visible light transmittance. The characteristic of low resistivity is the ideal material for transparent electrode of thin film solar cell. Aluminum-doped zinc oxide (ZAO) thin films with pyramidal suede structure have been prepared. At present, MOCVD method and magnetron sputtering combined with wet etching method are widely used. The former is expensive and the latter is difficult to control in the etching process. In this paper, a layer of Al-doped zinc oxide (ZAO) thin films was prepared by sol-gel method on quartz substrate, and then deposited on ZAO thin films by magnetron sputtering at low temperature. Aluminum-doped ZnO (ZAO) thin films with suede structure were prepared by magnetron sputtering. The cheap preparation of suede structure ZAO films was realized. In this paper, the effect of process conditions on the crystalline properties of ZAO thin films prepared on quartz glass substrates by sol-gel method was investigated. The optimum technological conditions for the preparation of self-supporting ZAO thin films were obtained as follows: solution concentration 0.80 mol / L; aluminum doping concentration 4 attic; aging time 5 days (120h); drying temperature 150 鈩，
本文编号：2225410
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