溶胶—凝胶法制备二氧化锡纳米复合薄膜及其电学特性研究
发布时间：2018-09-07 17:50
【摘要】：本文首先对金属氧化物半导体薄膜在气敏传感器上的应用进行了综述,发现在众多的金属氧化物半导体材料中,由于二氧化锡(SnO2)具有良好的电学、光学和气敏性能,故广泛应用于气敏传感器、太阳能电池、发光材料等领域。在综述的基础上,本文确定了用溶胶-凝胶法制备Sn02纳米复合薄膜。 在实验方面,以金属无机盐SnCl2·2H2O、CuCl2·2H2O和CH3CH2OH为原料,制备了SnO2薄膜和CuO掺杂的SnO2(CuO-SnO2)薄膜,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和电化学工作站,系统的研究了退火温度、旋涂次数和添加聚乙二醇PEG(1000)对SnO2纳米复合薄膜的物相、微观结构和电学特性的影响。研究结果表明：CuO-SnO2薄膜热处理温度在450℃C-550℃之间比较合适,随着退火温度的增加,SnO2薄膜结晶性逐渐变好,晶粒长大,电学特性比较好,且掺杂CuO后的SnO2薄膜电阻均小于同等条件下未掺杂的Sn02薄膜,制备的Sn02呈四方相金红石结构。综合考虑薄膜的微观结构、电学特性等因素,我们确定了最佳的退火温度为450℃,此后系统的研究了退火温度在450℃下,CuO-SnO2薄膜不同旋涂层数的电学特性及添加不同含量聚乙二醇PEG(1000)后CuO-SnO2薄膜的电学特性。同时,对添加不同重量的聚乙二醇和丙三醇的CuO-SnO2薄膜进行了XRD,SEM、TEM分析及电学特性测试。 在理论模拟方面,结合气体动力学和气体吸附理论等相关理论知识,建立了金属氧化物半导体薄膜气敏传感器的灵敏度的模型,在此基础上将该模型进一步扩展,得出了其响应时间的表达式,讨论了表达式中各参数的变化与薄膜气敏传感器灵敏度和响应时间的关系。 总之,本论文在前期良好综述的基础上,对二氧化锡纳米复合薄膜进行了系统的研究,并在理论方面建立了气敏传感器灵敏度和响应时间的表达式。
[Abstract]:In this paper, the applications of metal oxide semiconductor films in gas sensors are reviewed. It is found that tin dioxide (SnO2) has good electrical, optical and gas sensing properties in many metal oxide semiconductor materials. Therefore, widely used in gas sensors, solar cells, luminescent materials and other fields. Based on the review, Sn02 nanocomposite films were prepared by sol-gel method. In experiment, SnO2 thin films and SnO2 (CuO-SnO2) films doped with CuO were prepared by using metal inorganic salt SnCl2 _ 2H _ 2O _ 2 CuCl _ 2 2H2O and CH3CH2OH as raw materials. The annealing temperature was systematically studied by means of (XRD), scanning electron microscope (XRD), (SEM), transmission electron microscope (SEM), (TEM) and electrochemical workstation. The effects of spin-coating times and the addition of polyethylene glycol PEG (1000) on the phase, microstructure and electrical properties of SnO2 nanocomposite films were investigated. The results show that the heat treatment temperature is suitable at 450 鈩，
本文编号：2228984
[Abstract]:In this paper, the applications of metal oxide semiconductor films in gas sensors are reviewed. It is found that tin dioxide (SnO2) has good electrical, optical and gas sensing properties in many metal oxide semiconductor materials. Therefore, widely used in gas sensors, solar cells, luminescent materials and other fields. Based on the review, Sn02 nanocomposite films were prepared by sol-gel method. In experiment, SnO2 thin films and SnO2 (CuO-SnO2) films doped with CuO were prepared by using metal inorganic salt SnCl2 _ 2H _ 2O _ 2 CuCl _ 2 2H2O and CH3CH2OH as raw materials. The annealing temperature was systematically studied by means of (XRD), scanning electron microscope (XRD), (SEM), transmission electron microscope (SEM), (TEM) and electrochemical workstation. The effects of spin-coating times and the addition of polyethylene glycol PEG (1000) on the phase, microstructure and electrical properties of SnO2 nanocomposite films were investigated. The results show that the heat treatment temperature is suitable at 450 鈩，
本文编号：2228984
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