铝离子掺杂氧化锌薄膜的溶胶—凝胶法制备及性能
发布时间：2018-10-09 12:09
【摘要】：目前,薄膜材料已成为微电子学、光电子学、材料表面改性、传感器和太阳能利用等许多新型交叉学科的重要的材料基础。其中,透明导电氧化物薄膜材料因其大的载流子浓度和光学禁带宽度而具有优良的光学性能和导电性能,应用领域非常广泛,比如应用于太阳能电池、平板显示器的透明电极、电磁防护屏等方面。 ZnO薄膜由于具有优异的压电、光电、压敏等特性,原材料在自然界中的储量丰富、易于制造、成本低廉、无毒和化学稳定性好,近年来受到广泛的关注,特别是Al3+掺杂的ZnO薄膜(简称ZAO或AZO)。 常用的制备氧化物透明导电薄膜的工艺有磁控溅射、化学气相沉积、真空蒸发和溶胶-凝胶法。比较这些方法,溶胶-凝胶法具有工艺简单,成分易于控制,成本低廉和工艺参数易控等优点。 因此,本论文运用室温溶胶-凝胶技术和热处理工艺,在载玻片上制备出Al离子掺杂的ZnO薄膜。采用X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜的成分、结构和形貌进行了表征；通过紫外-可见光分光光度计对薄膜的透光性能进行了研究。 结果表明,所制备的氧化锌薄膜为六方纤锌矿结构,沿C轴方向择优生长；没有发现铝离子的掺杂对氧化锌的基本结构的改变；所掺杂的Al离子为取代锌离子的替位掺杂；热处理后,氧化锌颗粒为六角形针(柱)状形貌；随着热处理温度的升高,薄膜的透光率增加；经600℃热处理后的氧化锌薄膜,随着铝离子掺杂浓度的增加,透光率先增加后变小,并在铝离子掺杂浓度为2%时,透光率达到最大值；铝离子掺杂浓度较大时,晶格畸变的影响使薄膜的透光率降低。溶胶浓度为0.6mol/L、铝与锌的摩尔比为2%和热处理温度为600℃时,所制备的薄膜的质量和性能最好。
[Abstract]:At present, thin film materials have become the important material foundation of many new interdisciplinary disciplines, such as microelectronics, optoelectronics, material surface modification, sensor and solar energy utilization. Among them, transparent conductive oxide thin films have excellent optical properties and conductive properties due to their large carrier concentration and optical band gap. They are widely used in many fields, such as solar cells and transparent electrodes for flat panel displays. Electromagnetic protection screen and other aspects. Due to its excellent piezoelectric, optoelectronic and pressure-sensitive properties, ZnO thin films are widely concerned in recent years because of their abundant reserves in nature, easy to manufacture, low cost, non-toxic and good chemical stability. Especially ZnO films doped with Al3 (ZAO or AZO). For short) The common processes of preparing oxide transparent conductive thin films include magnetron sputtering, chemical vapor deposition, vacuum evaporation and sol-gel method. Compared with these methods, sol-gel method has the advantages of simple process, easy control of composition, low cost and easy control of process parameters. Therefore, in this thesis, Al ion doped ZnO thin films were prepared on glass substrates by using room temperature sol-gel technique and heat treatment. The composition, structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the transmittance of the films was studied by UV-Vis spectrophotometer. The results showed that the ZnO thin films were hexagonal wurtzite structure and preferred growth along the C axis, no changes of the basic structure of zinc oxide were found due to the doping of aluminum ions, and the doped Al ions were substituted for zinc ions. After heat treatment, the zinc oxide particles are hexagonal needle (column) shape, the transmittance of the film increases with the increase of heat treatment temperature, and the zinc oxide film after heat treatment at 600 鈩，
本文编号：2259286
[Abstract]:At present, thin film materials have become the important material foundation of many new interdisciplinary disciplines, such as microelectronics, optoelectronics, material surface modification, sensor and solar energy utilization. Among them, transparent conductive oxide thin films have excellent optical properties and conductive properties due to their large carrier concentration and optical band gap. They are widely used in many fields, such as solar cells and transparent electrodes for flat panel displays. Electromagnetic protection screen and other aspects. Due to its excellent piezoelectric, optoelectronic and pressure-sensitive properties, ZnO thin films are widely concerned in recent years because of their abundant reserves in nature, easy to manufacture, low cost, non-toxic and good chemical stability. Especially ZnO films doped with Al3 (ZAO or AZO). For short) The common processes of preparing oxide transparent conductive thin films include magnetron sputtering, chemical vapor deposition, vacuum evaporation and sol-gel method. Compared with these methods, sol-gel method has the advantages of simple process, easy control of composition, low cost and easy control of process parameters. Therefore, in this thesis, Al ion doped ZnO thin films were prepared on glass substrates by using room temperature sol-gel technique and heat treatment. The composition, structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), and the transmittance of the films was studied by UV-Vis spectrophotometer. The results showed that the ZnO thin films were hexagonal wurtzite structure and preferred growth along the C axis, no changes of the basic structure of zinc oxide were found due to the doping of aluminum ions, and the doped Al ions were substituted for zinc ions. After heat treatment, the zinc oxide particles are hexagonal needle (column) shape, the transmittance of the film increases with the increase of heat treatment temperature, and the zinc oxide film after heat treatment at 600 鈩，
本文编号：2259286
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