水滑石前体法制备Fe掺杂ZnO纳米材料及其发光性能研究
发布时间：2018-11-23 07:44
【摘要】： 氧化锌(ZnO)是一种重要直接宽带隙的半导体材料,在生物、化学、气敏传感器、场发射、纳米激光器、太阳能电池等光电器件方面有广阔的应用前景。掺杂是非常重要的半导体改性技术,通过掺入杂质元素可以改变或提高ZnO光学、磁学和电学等方面性能。目前,关于掺杂ZnO纳米材料的制备及其性能研究主要集中在Al、Ga、In、N、Mn和Co等元素,而Fe元素掺杂而报道较少。 本文首次以锌铁水滑石(ZnFe-LDH)为单一前驱体制备Fe掺杂ZnO一维纳米材料及其取向纳米结构薄膜,并研究了其光致发光性能。具体研究结果如下： 1.采用热蒸发法以ZnFe-LDH纳米粒子为前驱体,以硅片为基底,在较低的温度范围内沉积制得均匀Fe掺杂ZnO一维纳米材料；其中ZnO为六方纤锌矿结构单晶,掺杂元素Fe进入ZnO晶格,未观察到Fe杂质相。通过改变反应温度,实现了其纳米结构及Fe掺杂量的调控,分别在600℃、700℃、800℃条件下得到Fe的掺杂量为0.16%、0.30%和0.49%的ZnO纳米锥、纳米柱和纳米线。 光致发光性能研究表明,所得Fe掺杂ZnO一维纳米材料具有独特的发光性能,其均在389nm处出现半峰宽较窄的紫外发射峰和在蓝绿光区451nm、468nm、477nm出现了结构化的发射峰。特殊地,在600℃条件下所得ZnO纳米锥在477nm处发射峰半峰宽窄且强度强,在700℃、800℃条件下所得产物在蓝绿光区的结构化的发射峰因氧空位影响其强度被增强。最后,我们揭示了该法制备均匀Fe掺杂ZnO一维纳米材料的生长机理为气固机理。 2.采用成膜技术将ZnFe-LDH纳米粒子组装成致密有序的(00l)取向薄膜,以其为前驱体并同时作为基底,在管式气氛炉中焙烧,在较低温度(500℃)和低载气流速下原位生长(00l)取向Fe掺杂ZnO纳米棒薄膜,其中纳米棒沿(00l)晶面择优生长,直径可以在20nm-100nm,长度80nm-400nm范围内调控。薄膜在390nm处较强的紫外发射峰和在蓝绿光区468nm、477nm处出现较弱的结构化发射峰。
[Abstract]:Zinc oxide (ZnO) is an important semiconductor material with wide band gap. It has a wide application prospect in biology, chemistry, gas sensor, field emission, nanometer laser, solar cell and other optoelectronic devices. Doping is a very important semiconductor modification technology. Doping with impurity elements can change or improve the optical, magnetic and electrical properties of ZnO. At present, the preparation and properties of doped ZnO nanomaterials are mainly focused on the elements such as Al,Ga,In,N,Mn and Co. However, there are few reports on the doping of Fe elements. In this paper, Fe doped one-dimensional (ZnO) nanocrystals and their oriented nanostructured films were prepared by using zinc ferrite talc (ZnFe-LDH) as a single precursor for the first time, and their photoluminescence properties were studied. The results are as follows: 1. Homogeneous Fe doped ZnO one-dimensional nanomaterials were prepared by thermal evaporation method with ZnFe-LDH nanoparticles as precursor and silicon wafer as substrate in a lower temperature range. ZnO is hexagonal wurtzite structure single crystal, doped element Fe into the ZnO lattice, no Fe impurity phase was observed. By changing the reaction temperature, the nanostructure and the amount of Fe doping were controlled. At 600 鈩，
本文编号：2350815
[Abstract]:Zinc oxide (ZnO) is an important semiconductor material with wide band gap. It has a wide application prospect in biology, chemistry, gas sensor, field emission, nanometer laser, solar cell and other optoelectronic devices. Doping is a very important semiconductor modification technology. Doping with impurity elements can change or improve the optical, magnetic and electrical properties of ZnO. At present, the preparation and properties of doped ZnO nanomaterials are mainly focused on the elements such as Al,Ga,In,N,Mn and Co. However, there are few reports on the doping of Fe elements. In this paper, Fe doped one-dimensional (ZnO) nanocrystals and their oriented nanostructured films were prepared by using zinc ferrite talc (ZnFe-LDH) as a single precursor for the first time, and their photoluminescence properties were studied. The results are as follows: 1. Homogeneous Fe doped ZnO one-dimensional nanomaterials were prepared by thermal evaporation method with ZnFe-LDH nanoparticles as precursor and silicon wafer as substrate in a lower temperature range. ZnO is hexagonal wurtzite structure single crystal, doped element Fe into the ZnO lattice, no Fe impurity phase was observed. By changing the reaction temperature, the nanostructure and the amount of Fe doping were controlled. At 600 鈩，
本文编号：2350815
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