磁控溅射法制备柔性ZnO:Al薄膜及其光电性能研究

发布时间：2018-12-07 17:04

【摘要】： 采用射频磁控溅射法在PEN和PET衬底上室温制备了柔性AZO薄膜。结果表明,实验制备的柔性AZO薄膜为六角纤锌矿结构,且具有良好的c轴择优取向。溅射功率、工作气压、衬底种类、Ar气流量等生长条件对薄膜的结构、光电性能有一定影响。工作气压增大恶化薄膜结晶性能,使薄膜电阻率增大,禁带宽度由于Burstein-Moss效应而变窄。在溅射功率为150W,Ar气流量为20sccm和工作气压为0.05Pa的优化条件下,PEN衬底上沉积的AZO薄膜品质因数最高,达到1.78×10~4Ω-1·cm~(-1),此时薄膜电阻率、载流子浓度和霍尔迁移率分别为1.11×10~(-3)Ω·cm、4.14×10~(20)cm~(-3)和13.60 cm~2·V~(-1)·s~(-1),薄膜的可见光绝对透射率达到95.70%。在优化生长的AZO薄膜基础上,利用射频磁控溅射法在PET和玻璃衬底上室温制备了AZO/Ag/AZO多层膜,并研究了Ag层厚度、Ag层溅射功率以及衬底种类对多层膜结构和光电性能的影响。结果表明,AZO/Ag/AZO多层膜呈现ZnO(002)和Ag(111)择优取向,且Ag(111)衍射峰强度随Ag层厚度的增加而增大。薄膜导电性随Ag层厚度增加而增强,但在Ag层生长初期,霍尔迁移率由于受界面散射影响而减小。在Ag层溅射功率为200W,Ag层厚度为24nm的优化条件下,薄膜品质因数最高,此时PET上沉积的多层膜电阻率、透射率、品质因数分别达到3.97×10~(-5)Ω·cm、78.67%和6.59×10~4Ω~(-1)·cm~(-1)。
[Abstract]:Flexible AZO thin films were prepared on PEN and PET substrates by RF magnetron sputtering at room temperature. The results show that the prepared flexible AZO thin films have hexagonal wurtzite structure and good c-axis preferred orientation. Sputtering power, working pressure, substrate type, Ar gas flow rate and other growth conditions have certain influence on the structure and optoelectronic properties of the films. With the increase of the working pressure, the crystalline properties of the films are deteriorated, and the resistivity of the films is increased, and the band gap is narrowed due to the Burstein-Moss effect. When the sputtering power is 150W ar gas flow rate is 20sccm and the working pressure is 0.05Pa, the quality factor of AZO film deposited on PEN substrate is the highest, reaching 1.78 脳 10 ~ (4) 惟 -1 cm~ (-1), and the film resistivity is obtained. The carrier concentration and Hall mobility are 1.11 脳 10 ~ (-3) 惟 cm,4.14 脳 10 ~ (20) cm~ (-3) and 13.60 cm~2 V ~ (-1) s ~ (-1), respectively. Based on the optimized growth of AZO films, AZO/Ag/AZO multilayers were prepared on PET and glass substrates at room temperature by RF magnetron sputtering, and the thickness of Ag layers was studied. The effects of sputtering power and substrate type of Ag layer on the structure and optoelectronic properties of multilayer films. The results show that the ZnO (002) and Ag (111) preferred orientations of AZO/Ag/AZO multilayer films, and the intensity of Ag (111) diffraction peak increases with the increase of Ag layer thickness. The conductivity of the film increases with the thickness of the Ag layer, but at the beginning of the growth of the Ag layer, the Hall mobility decreases due to the influence of the interface scattering. When the sputtering power of Ag layer is 200W Ag layer thickness is 24nm, the film quality factor is the highest, and the resistivity, transmittance and quality factor of the multilayer film deposited on PET are 3.97 脳 10 ~ (-5) 惟 cm, respectively. 78.67% and 6.59 脳 10 ~ 4 惟 ~ (-1) cm~ (-1).
【学位授予单位】：南京航空航天大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：TB43

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