硅锗薄膜材料的RF-PECVD法制备及其在太阳电池中的应用
发布时间：2019-03-17 18:51
【摘要】：硅锗薄膜材料具有吸收系数高、带隙窄(1.1~0.66eV)的优点，可大幅提高太阳光的吸收效率并拓宽光谱响应范围，从而提高太阳电池的转换效率。硅锗合金薄膜材料可用于叠层电池中，且叠层电池具有结构好，能提高光电转换效率、降低光致衰退和提高光谱响应范围等优点，因此，激起了国内外对硅锗合金薄膜电池极大的研究热情。 本文采用射频等离子化学气相沉积（RF-PECVD）技术制备了硅锗薄膜。系统研究了氢稀释率、锗烷浓度以及薄膜中锗含量、反应气压、辉光功率、电极间距和衬底温度等对硅锗薄膜光电特性和结构特性的影响。结果表明：在实验研究的范围内，材料的暗电导率随着沉积温度的升高、锗烷浓度的增加、沉积压强的降低、氢稀释率的降低而增加；材料的光敏性随衬底温度的升高、辉光功率的增加、沉积压强的增加、锗烷浓度的降低、氢稀释率的降低而增加。通过实验研究，在衬底温度为175℃，锗烷浓度为5%，氢稀释率为24，总气体流量约为200sccm，沉积压强为3Torr，辉光功率为90W的时候，获得了光敏性达5×105的非晶硅锗薄膜材料，其生长速度为0.08nm/s；在衬底温度为175℃，锗烷浓度为1.4%，氢稀释率为82，，总气体流量约为400sccm，沉积压强为3Torr，辉光功率为60W的时候，获得了适合做太阳电池有源层的微晶硅锗薄膜材料，经过Raman三峰拟合其晶化率为41%，其光敏性达2×104，其生长速度为0.04nm/s。 将上述优化的非晶硅锗材料应用于太阳电池的本征吸收层，制备了一系列非晶硅锗太阳电池，电池采用的结构为：glass/SnO2/p-ａ-Si:H /i-ａ-SiGe:H /n-nc Si:H /Al，研究了非晶硅锗材料的光电特性、结构特性对太阳电池性能的影响，获得了转换效率η=4.29%的ａ SiGe薄膜太阳电池，通过优化p/i界面的buffer层结构，适当延迟锗烷气体的开启时间，使得电池的填充因子FF从46%上升到了53%，最终获得了转换效率为4.99%的ａ SiGe薄膜电池。
[Abstract]:The silicon-germanium thin film material has the advantages of high absorption coefficient and narrow band gap (1.1~0.66eV), which can greatly improve the absorption efficiency of solar light and broaden the spectral response range, so as to improve the conversion efficiency of solar cells. The silicon-germanium alloy thin film material can be used in laminated battery, and the laminated cell has good structure, can improve the photoelectric conversion efficiency, reduce the photodegradation and increase the spectral response range and so on. The research enthusiasm of silicon-germanium alloy thin-film battery at home and abroad has been aroused. Silicon-germanium thin films were prepared by radio-frequency plasma chemical vapor deposition (RF-PECVD). The effects of hydrogen dilution ratio, germanium concentration, germanium content, reaction pressure, glow power, electrode spacing and substrate temperature on the photoelectric and structural properties of silicon-germanium thin films were systematically studied. The results show that the dark conductivity of the materials increases with the increase of deposition temperature, the concentration of germanium, the decrease of deposition pressure and the reduction of hydrogen dilution rate. The photosensitivity of the materials increases with the increase of substrate temperature, glow power, deposition pressure, germanium concentration and hydrogen dilution. When the substrate temperature is 175 鈩
本文编号：2442594
[Abstract]:The silicon-germanium thin film material has the advantages of high absorption coefficient and narrow band gap (1.1~0.66eV), which can greatly improve the absorption efficiency of solar light and broaden the spectral response range, so as to improve the conversion efficiency of solar cells. The silicon-germanium alloy thin film material can be used in laminated battery, and the laminated cell has good structure, can improve the photoelectric conversion efficiency, reduce the photodegradation and increase the spectral response range and so on. The research enthusiasm of silicon-germanium alloy thin-film battery at home and abroad has been aroused. Silicon-germanium thin films were prepared by radio-frequency plasma chemical vapor deposition (RF-PECVD). The effects of hydrogen dilution ratio, germanium concentration, germanium content, reaction pressure, glow power, electrode spacing and substrate temperature on the photoelectric and structural properties of silicon-germanium thin films were systematically studied. The results show that the dark conductivity of the materials increases with the increase of deposition temperature, the concentration of germanium, the decrease of deposition pressure and the reduction of hydrogen dilution rate. The photosensitivity of the materials increases with the increase of substrate temperature, glow power, deposition pressure, germanium concentration and hydrogen dilution. When the substrate temperature is 175 鈩
本文编号：2442594
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