Ga掺杂浓度对溶胶-凝胶法制备GZO薄膜光电性能的影响
发布时间：2019-04-16 18:49
【摘要】：采用溶胶-凝胶法在玻璃基片上制备掺镓氧化锌透明导电薄膜,用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计、霍尔效应仪等测试分别表征GZO薄膜的晶体结构、表面形貌、光电性能等,研究Ga掺杂量对GZO薄膜性能的影响。结果表明:所制备的GZO薄膜均为六方纤锌矿结构并有沿c轴择优生长趋势,随着Ga掺杂量的增加,薄膜透过率先增加再减小,当Ga掺杂量为4at%时透过率最高,可见光区平均透过率达97.4%,薄膜电阻率则随掺杂量增加而下降,在Ga掺杂量为5at%时达最小值7.62×10-3Ω·cm。
[Abstract]:Transparent conductive thin films of gallium-doped zinc oxide were prepared on glass substrates by sol-gel method. The crystal structure of GZO thin films was characterized by X-ray diffractometer, scanning electron microscope, UV-vis spectrophotometer and Hall effector. The effect of Ga doping content on the properties of GZO thin films was studied by surface morphology and photoelectric properties. The results show that the GZO thin films have hexagonal wurtzite structure and preferred growth trend along the c axis. With the increase of Ga doping content, the permeability of the films increases first and then decreases, and the transmittance is the highest when the content of Ga doping is 4 at%. The average transmittance in the visible region is up to 97.4%, and the resistivity of the film decreases with the increase of the doping content, and reaches the minimum value of 7.62 脳 10 脳 10 ~ 3 惟 cm. when the Ga doping content is 5 at%.
【作者单位】： 三峡大学材料与化工学院;桂林理工大学广西新能源与建筑节能重点实验室;
【基金】：广西建筑新能源与建筑节能重点实验室开放基金(A0008)
【分类号】：O484.1
[Abstract]:Transparent conductive thin films of gallium-doped zinc oxide were prepared on glass substrates by sol-gel method. The crystal structure of GZO thin films was characterized by X-ray diffractometer, scanning electron microscope, UV-vis spectrophotometer and Hall effector. The effect of Ga doping content on the properties of GZO thin films was studied by surface morphology and photoelectric properties. The results show that the GZO thin films have hexagonal wurtzite structure and preferred growth trend along the c axis. With the increase of Ga doping content, the permeability of the films increases first and then decreases, and the transmittance is the highest when the content of Ga doping is 4 at%. The average transmittance in the visible region is up to 97.4%, and the resistivity of the film decreases with the increase of the doping content, and reaches the minimum value of 7.62 脳 10 脳 10 ~ 3 惟 cm. when the Ga doping content is 5 at%.
【作者单位】： 三峡大学材料与化工学院;桂林理工大学广西新能源与建筑节能重点实验室;
【基金】：广西建筑新能源与建筑节能重点实验室开放基金(A0008)
【分类号】：O484.1
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