磁控溅射法制备的Al-Mg-B薄膜的研究

发布时间：2018-01-18 12:10

  本文关键词：磁控溅射法制备的Al-Mg-B薄膜的研究　出处：《大连理工大学》2011年硕士论文　论文类型：学位论文

  更多相关文章： 射频磁控溅射 Al-Mg-B薄膜 电子探针 傅里叶红外光谱 纳米压痕

【摘要】：铝镁硼(AlMgB14)作为一种新型超硬纳米材料,以其优异的机械、热学和电学性能有着广泛的应用前景。铝镁硼(Al-Mg-B)薄膜的元素成分、表面形貌、内部结构等对其机械、热学和电学性能的影响十分明显。因此研究沉积参数和掺杂对Al-Mg-B薄膜的内部结构和表面特性的影响有重要的意义。 本文采用磁控溅射的方法制备了Al-Mg-B薄膜。研究了基片温度、硼溅射功率、靶材组成、偏压及其掺杂对Al-Mg-B薄膜的元素含量、成键性质、表面形貌及其力学性能的影响。采用电子探针显微分析(EPMA)、原子力显微镜(AFM)、X射线衍射(XRD)、傅立叶红外光谱(FTIR)、纳米压痕等对薄膜进行了表征。工作主要内容如下： (1)在不同的沉积温度和硼溅射功率下,采用磁控溅射法成功制备了Al-Mg-B薄膜。结果表明,由于受到基片温度和硼溅射功率的影响,Al-Mg-B薄膜的硬度随着B含量的升高而增加。Al-Mg-B薄膜的最大硬度约为31 GPa,其硼含量为65 at.%。Al-Mg-B薄膜的表面很光滑。随着基片温度和硼溅射功率的增加,薄膜的表面粗糙度变小。最好的表面粗糙度达到约0.5 nm,摩擦系数可达到0.05,同时这个薄膜的硬度也最高。在沉积Al-Mg-B薄膜过程中,沉积温度和硼溅射功率扮演重要的角色,因为它们大大影响了薄膜中硼的含量。 (2)采用磁控溅射方法,改变AlMg复合靶的比率,成功制备出Al-Mg-B薄膜。结果表明,非晶薄膜的成分接近于AlMgB14晶体的原子含量,表面非常平滑。通过改变AlMg复合靶的比率在一定程度上对Al-Mg-B薄膜的性能有所改善：当AlMg复合靶的Al:Mg比值接近于1时,制备的薄膜具有更高的硬度,表面更平滑,摩擦系数最低。因此AlMg复合靶对制备不同性能的Al-Mg-B薄膜有重要影响。 (3)在不同的偏压下,利用高真空的磁控溅射设备在Si(100)上制备Al-Mg-B薄膜。结果表明,在600℃下沉积的薄膜成分是均匀的,并且改变偏压对薄膜化学组成基本没有影响；适当地偏压有助于Al-Mg-B薄膜中B12二十面体的形成,从而导致薄膜的硬度的升高,最高可达到30.7 GPa。 (4)分别以铬、钛、氮为掺杂物,通过磁控溅射法采用两靶共溅射制备了掺杂Al-Mg-B薄膜。结果表明,Cr、Ti和N都分别充分地进入薄膜中；Al-Mg-B薄膜中掺入Cr元素对薄膜的B12的生长有一定的抑制作用,从而降低了薄膜的硬度；掺入N的薄膜中化学键态主要是sp2型B-N键,从而导致掺N的薄膜硬度仅仅为2 GPa；掺入Ti的薄膜的硬度只有9 GPa,可能主要是由B-O键导致的。总之,掺杂的Al-Mg-B薄膜的性能存在明显的差异,为其后续的研究打下良好基础。
[Abstract]:AlMgB14), as a new superhard nano-material, has a wide application prospect for its excellent mechanical, thermal and electrical properties. Surface morphology, internal structure, etc. The influence of deposition parameters and doping on the internal structure and surface properties of Al-Mg-B thin films is very obvious, so it is of great significance to study the influence of deposition parameters and doping on the internal structure and surface properties of Al-Mg-B films. In this paper, Al-Mg-B thin films were prepared by magnetron sputtering. The substrate temperature, boron sputtering power, target composition, bias voltage and its doping on the element content of Al-Mg-B thin films were studied. The effects of bonding properties, surface morphology and mechanical properties were investigated by electron probe microanalysis (EPMA) and atomic force microscopy (AFM) X-ray diffraction (XRD). The films were characterized by Fourier transform infrared spectroscopy (FTIR) and nano-indentation. 1) Al-Mg-B thin films were successfully prepared by magnetron sputtering at different deposition temperatures and boron sputtering power. The results show that the films are affected by substrate temperature and boron sputtering power. The hardness of Al-Mg-B films increases with the increase of B content. The maximum hardness of Al-Mg-B films is about 31 GPa. The surface of the film with boron content of 65 at.%.Al-Mg-B is very smooth, with the increase of substrate temperature and boron sputtering power. The surface roughness of the film becomes smaller. The best surface roughness is about 0.5 nm, the friction coefficient is up to 0.05, and the hardness of the film is also the highest. Deposition temperature and boron sputtering power play an important role because they greatly affect the content of boron in the film. (2) Al-Mg-B thin films were successfully prepared by magnetron sputtering method and the ratio of AlMg composite targets was changed. The composition of amorphous film is close to the atomic content of AlMgB14 crystal. The surface is very smooth. The performance of Al-Mg-B films is improved to some extent by changing the ratio of AlMg composite target: when the Al:Mg ratio of AlMg composite target is close to 1:00. The prepared films have higher hardness, smoother surface and the lowest friction coefficient. Therefore, the AlMg composite target has an important effect on the preparation of Al-Mg-B thin films with different properties. Al-Mg-B thin films were prepared on Si-100 with high vacuum magnetron sputtering equipment at different bias voltages. The results show that the composition of the films deposited at 600 鈩，

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