工艺参数对直流磁控溅射法制备氧化铝薄膜的试验研究

发布时间：2018-01-30 02:36

本文关键词： 直流磁控溅射氧化铝薄膜沉积速率正交试验非晶态　出处：《制造技术与机床》2017年03期 　论文类型：期刊论文

【摘要】：采用直流磁控溅射法在载玻片和不锈钢基底上制备某设计要求的氧化铝薄膜,首先采用单因素法分别分析溅射功率、氧气流量、工作压强、负偏压及本底真空度等制备参数对薄膜沉积速率的影响;在此基础上设计正交试验,研究优化范围内溅射功率、氧气流量、工作压强对沉积速率的影响,并进行极差与方差分析。结果表明,在一定工艺参数范围内,随着溅射功率的增加,薄膜的沉积速率不断增大;氧气流量增加时薄膜的沉积速率不断下降;随着工作压强的增大,薄膜的沉积速率先增大后减小,在1.0 Pa时达到最大速率;加载的负偏压增加时,薄膜的沉积速率不断降低;本底真空度提高时薄膜的沉积速率不断增大;通过使用XRD衍射仪对制备的薄膜进行物相检测,研究结果表明,常温下不同氧气流量制备的氧化铝薄膜均为非晶态;获取了制备所需薄膜的较优的制备工艺。
[Abstract]:Aluminum oxide thin films were prepared on glass slide and stainless steel substrate by DC magnetron sputtering. Firstly, the sputtering power, oxygen flow rate and working pressure were analyzed by single factor method. The influence of negative bias voltage and background vacuum on the deposition rate of films; On this basis, orthogonal experiments were designed to study the effects of sputtering power, oxygen flow rate and working pressure on deposition rate in the optimized range, and the range and variance analysis were carried out. The results showed that the influence of sputtering power, oxygen flow rate and working pressure on deposition rate was within a certain range of technological parameters. The deposition rate of the films increases with the increase of sputtering power. The deposition rate of the films decreases with the increase of oxygen flow rate. With the increase of the working pressure, the deposition rate of the film first increases and then decreases, and reaches the maximum rate at 1.0 Pa. The deposition rate of the film decreases with the increase of negative bias voltage. The deposition rate of the film increases with the increase of background vacuum. By using XRD diffractometer to detect the phase of the films, the results show that the alumina films prepared with different oxygen flow rate are amorphous at room temperature. The optimal preparation process of the required films was obtained.
【作者单位】：中北大学机械与动力工程学院;
【基金】：山西省国际科技合作项目(2015081018)
【分类号】：TQ133.1;TB383.2
【正文快照】： 氧化铝薄膜因其有高的介电常数、高的热导率、高硬度,机械强度及耐腐蚀性强,化学惰性好,是一种非常重要的功能薄膜材料,它特别适合在薄膜传感器制备工艺中用于制作合金薄膜与金属基底的绝缘层[1-2]。目前需要设计一种薄膜传感器,其中传感器氧化铝绝缘层的设计要求见本课题组成

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