廉价衬底上PECVD法制备非晶硅薄膜的工艺研究

发布时间：2018-02-02 13:19

  本文关键词： 非晶硅薄膜 PECVD 沉积速率 组态　出处：《河北工业大学》2010年硕士论文　论文类型：学位论文

【摘要】：环境污染和能源危机是现代社会面临的严峻问题，太阳能作为可再生的清洁能源使得太阳能电池的研究日益重要。非晶硅薄膜太阳能电池已经成为光伏领域的热点，廉价衬底的引入使其在成本方面具有更强的市场竞争力。非晶硅薄膜近年来也得到了广泛的研究。 本文采用等离子体增强化学气相沉积(PECVD)设备，以SiH4和H2为气源，分别在玻璃片、单晶硅片、不锈钢片衬底上制备了非晶硅薄膜。采用XRD、Raman、SEM、FTIR等分析技术研究了硅烷浓度、衬底温度、射频功率、沉积气压等工艺参数对薄膜生长速率、结构、组态和表面形貌的影响。 实验结果表明，玻璃衬底上非晶硅薄膜的沉积速率随硅烷浓度的增加、衬底温度的升高、射频功率和沉积气压的增大而增加。当硅烷浓度从3%增加到5%时，沉积速率增幅是最大的，当硅烷浓度由低到高变化时，薄膜结构中的SiH、SiH2组态转变为SiH组态；当衬底温度从300℃升高到350℃时，沉积速率提高最快，当衬底温度由低到高变化时，薄膜结构中的SiH、SiH2组态转变为SiH组态；当射频功率从40W增大到70W时，，沉积速率增长最快，当射频功率由低到高变化时，薄膜结构中的SiH组态转变为SiH、SiH2组态；当沉积气压从80Pa增大到100Pa时，沉积速率提高最快，当沉积气压由低到高变化时，薄膜结构中的SiH、SiH2组态转变为SiH组态。通过实验得到了利用现有设备生长非晶硅薄膜的优化工艺参数。衬底材料的不同对薄膜的表面形貌有很大影响，玻璃和硅片上的薄膜表面较平整均匀，不锈钢片上的薄膜表面很粗糙。
[Abstract]:Environmental pollution and energy crisis are serious problems in modern society. Solar energy as a renewable clean energy makes the research of solar cells increasingly important. Amorphous silicon thin film solar cells have become a hot spot in the field of photovoltaic. The introduction of cheap substrates makes them more competitive in the market cost, and amorphous silicon thin films have been widely studied in recent years. In this paper, the plasma enhanced chemical vapor deposition (PECVD) equipment is used. SiH4 and H2 are used as gas source on glass and single crystal silicon, respectively. Amorphous silicon thin films were prepared on stainless steel substrates. The concentration of silane, substrate temperature and RF power were studied by using XRDX Ramanine SEMIR and FTIR techniques. The effect of deposition pressure on the growth rate, structure, configuration and surface morphology of the films. The experimental results show that the deposition rate of amorphous silicon films on glass substrates increases with the increase of silane concentration and substrate temperature. When the concentration of silane increased from 3% to 5, the increase of deposition rate was the largest. When the concentration of silane changed from low to high, the SiH in the film structure was increased. SiH2 configuration changed to SiH configuration; When the substrate temperature is raised from 300 鈩

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