化学气相沉积法制备单层石墨烯的优化

发布时间：2018-02-15 04:41

  本文关键词： 石墨烯 化学气相沉积(CVD) 表征 单层 大面积　出处：《微纳电子技术》2017年03期 　论文类型：期刊论文

【摘要】：作为碳原子家族的最新成员,二维结构的石墨烯具备优异的物理化学性质和广阔的应用前景,成为新材料研究领域的热点研究对象。对化学气相沉积(CVD)法进行了优化,成功制备得到了高质量的单层石墨烯。优化后的实验工艺为:首先对铜箔进行化学抛光和退火预处理;然后将预处理后的铜箔加工成荷包状;氢气(H2)氛围下,以甲烷(CH4)为碳源,对石墨烯进行化学气相沉积;当甲烷和氢气体积流量分别为10 cm3/min和20 cm3/min时,在1 030℃条件下生长20 min制备得到最终样品。扫描电子显微镜(SEM)和激光喇曼光谱表征的结果显示:该方法制备的样品为大面积连续的单层石墨烯。
[Abstract]:As the newest member of the carbon atom family, graphene with two-dimensional structure has excellent physical and chemical properties and broad application prospects, and has become a hot research object in the field of new materials. The chemical vapor deposition (CVD) method has been optimized. A high quality graphene monolayer was successfully prepared. The optimized experimental process was as follows: first, the copper foil was chemically polished and annealed; then the pretreated copper foil was processed into a pocket shape; and the methane CH4) was used as the carbon source in the atmosphere of H _ 2H _ 2. Graphene was deposited by chemical vapor deposition, when the volume flow rate of methane and hydrogen was 10 cm3/min and 20 cm3/min, respectively. The final sample was prepared at 1 030 鈩，

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