磁控溅射法制备AZO透明导电薄膜及其性能研究

发布时间：2018-02-26 10:31

本文关键词： AZO透明导电薄膜磁控溅射溅射功率光学性能电学性能　出处：《暨南大学》2011年硕士论文　论文类型：学位论文

【摘要】：近年来,透明导电薄膜己成为液晶显示、触控面板、太阳能电池等的关键性材料之一,越来越受到人们的重视。且随着LCD的商品化、彩色化、大型化和提高太阳能电池能量转换效率的要求,对透明导电薄膜的要求也越来越高,需满足如下条件：电阻率低；透过率高；镀膜温度更接近室温；热稳定性优良；耐热性和耐碱性优良；硬度高；表面形状良好；与基底的附着性良好；能大面积均匀地镀膜；价格较低等。研究发现,掺铝氧化锌(AZO)薄膜具有同ITO薄膜可比拟的光电特性,且在等离子体中化学稳定性较好、氧化锌和铝材料来源丰富、价格低廉、几乎无毒性,逐渐成为化合物半导体材料中一个新的研究热点,呈现取代ITO薄膜的趋势,开始逐步应用到众多领域中。本论文采用常温固相烧结法,自制不同A1掺杂浓度的AZO陶瓷靶材；采用射频磁控溅射法,通过改变沉积工艺参数,制备不同性能的AZO薄膜样品；研究分析了不同参数对AZO薄膜结构和性能的影响,提出最佳工艺条件。结论如下： 1)不同工艺条件下均得到了呈现较强(002)衍射峰的AZO薄膜；溅射功率为150 W以下时,随着功率的提高,薄膜的结晶性越来越好,电阻率呈下降趋势；随着工作压强的降低,(002)衍射峰越来越强,电阻率越来越小,0.4 Pa时结晶效果最佳；随着薄膜厚度的增加,电阻率逐渐减小,可见光区透过率有所下降。 2)基底为室温时所得AZO薄膜的结晶性良好,导电性和透光性也较佳；随着基底温度的提高,薄膜晶粒变大,结晶程度有所提高；电阻率较大幅度下降。 3)不同Al掺杂浓度的AZO薄膜均呈六方纤锌矿结构,且随着Al浓度的提高,薄膜的导电性有所下降,2at%掺杂浓度的AZO样品效果最好。 4)在空气中,不同温度、不同时间退火后,AZO样品的结晶性和导电性并未提高,但可见光区透过率有所增加。
[Abstract]:In recent years, the transparent conductive film has become one of the liquid crystal display, touch panel, solar cells and other key materials, people pay more and more attention. With the commercialization of LCD, color, scale and improve solar energy conversion efficiency requirements, the transparent conductive film are increasingly high requirements. Must meet the following conditions: low resistivity; high transmittance; coating temperature close to room temperature; excellent thermal stability and excellent heat resistance; alkali resistance; high hardness; good surface; and good adhesion to the substrate; large area uniform coating; low price.
The study found that Zinc Oxide aluminum doped (AZO) films have the same photoelectric properties of ITO thin films can be compared, and good chemical stability in plasma, Zinc Oxide and aluminum rich material sources, low price, almost non-toxic, has gradually become a new research hotspot of compound semiconductor materials, ITO film to replace the present trend, gradually applied to many areas.
This paper adopts room temperature solid-phase sintering, self-made AZO ceramic targets with different A1 doping concentration; by RF magnetron sputtering, by changing the deposition parameters of AZO thin film samples were prepared with different properties; research and analysis of the effects of different parameters on the structure and properties of AZO thin films, the optimum conditions are as follows:
1) under different process conditions have been showing a strong (002) AZO thin film diffraction peak; the sputtering power is below 150 W, with the increase of power, the crystallinity of the thin film is getting better and better, the resistivity decreased with the decrease of working pressure; and (002) diffraction peak is more and more strong, more and more small resistivity 0.4 Pa, the best crystallization effect; with the increase of film thickness, the resistivity decreases, visible transmittance decreased.
2) when the substrate is at room temperature, the AZO film has good crystallinity, good conductivity and transparency. With the increase of substrate temperature, the grain size of the thin film increases and the degree of crystallinity increases, and the resistivity decreases.
3) the AZO films with different Al doping concentrations all exhibited the six wurtzite structure. With the increase of Al concentration, the conductivity of the films decreased, and the 2at% doped AZO samples had the best effect.
4) in the air, the crystallinity and conductivity of AZO samples did not increase after annealing at different temperatures and at different time, but the transmittance of the visible light area was increased.

【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：O484.1

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