化学气相沉积法制备Co,CoO,AlN薄膜及其复合膜的研究

发布时间：2018-02-26 16:46

本文关键词： 钴氧化钴氮化铝薄层化学气相沉积　出处：《清华大学》2011年硕士论文　论文类型：学位论文

【摘要】：本研究的背景为稀磁半导体薄膜的制作，共分两个部分。前一部分是关于生成的氧化钴及钴膜的形貌和性能，而后一部分则是关于氮化铝和钴复合膜的结构与性能的研究。两个部分材料的制作都是采用化学气相沉积法进行。在第一部分实验中，钴及氧化钴的纳米晶体以水化硝酸钴（Co(NO_3)_26H_2O）为原料，，通过化学气相沉积法沉积到硅基板上。扫描电镜（SEM）和透射电镜（TEM）的观察显示，合成温度不同，得到的膜显示不同的表面形态。如连续薄膜，纳米棒，纳米丁等。另外还利用X射线衍射，拉曼光谱，和VSM进行了膜的结构与性能的分析。在第二部分的实验中，合成了氮化铝及钴的复合膜。同样采用化学气相沉积法，以铝及钴硅从Al和水化硝酸钴（Co(NO_3)26H_2O）为原料，单晶硅为基板。XRD，SEM和VSM的结果表明，表面形态的不同会导致磁化强度改变。在这部分研究工作中成功地用TEM观察到了氮化铝的纳米线结构。钴的粒子则分布在氮化铝的纳米线中。这个结果表明所合成的氮化铝和钴在纳米尺度是完全分离的一种复合结构。
[Abstract]:The background of this study is the fabrication of thin magnetic semiconductor thin films , which are divided into two parts . The former part is about the morphology and properties of the cobalt oxide and cobalt films generated . The latter part is the research on the structure and properties of the aluminum nitride and cobalt composite films . Both of these materials are made by chemical vapor deposition . In the first experiment , cobalt and cobalt oxide nanocrystals were prepared by chemical vapor deposition ( XRD ) , Raman spectroscopy ( SEM ) and transmission electron microscopy ( TEM ) . The structures and properties of the films were analyzed by X - ray diffraction , Raman spectroscopy and TEM . In the experiment of the second part , the composite films of aluminum nitride and cobalt were synthesized . The results showed that Al and Co ( NO _ 3 ) 26H _ 2O were used as the raw materials and single crystal silicon as the substrate . The results of XRD , SEM and VSMs show that the different surface morphology results in the change of magnetization intensity . In this part of the research , the structure of the nanowires of aluminum nitride has been observed successfully . The results show that the synthesized aluminum nitride and cobalt are completely separated in the nano - scale .

【学位授予单位】：清华大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：TB383.2

【共引文献】