化学刻蚀法制备硅纳米线的研究

发布时间：2018-03-05 09:33

  本文选题：硅纳米线　切入点：太阳能电池　出处：《大连理工大学》2011年硕士论文　论文类型：学位论文

【摘要】：纳米结构是当今科学技术发展前沿中,极具发展前景的研究领域；硅材料在太阳能电池领域中应用最为广泛。因此,硅纳米线作为一种新型的一维纳米半导体材料,其新颖的光学和电学特性备受关注,而对硅纳米线的研究也成为太阳能电池领域研究的热点之一。 制备硅纳米线的常用方法有：激光烧蚀法,化学气相沉积法(CVD法)、氧化物辅助生长发、模板制备法、纯化学腐蚀法等等；其中化学腐蚀方法操作简单,设备要求低,比较适合制备一定数量的硅纳米线。目前多采用以氢氟酸和硝酸银溶液配制腐蚀溶液进行制备,技术也比较成熟；对依据同一制备原理的硝酸铁溶液刻蚀方法的研究则相对较少。而硝酸铁的成本仅仅是硝酸银的几十分之一,如此低廉的成本优势,决定了采用硝酸铁进行化学刻蚀制备硅纳米线具有重要的意义。 本论文对硅纳米线的生长机理和制备方法进行了研究。在大量摸索实验的基础上,讨论了采用氢氟酸与硝酸铁腐蚀溶液进行湿法刻蚀硅纳米线的制备条件与范围。通过扫描电子显微镜对在室温下,不同腐蚀液浓度、不同腐蚀时间的样品进行检测,得到了硅纳米线的表面形貌。通过对样品的表面形貌进行分析,得出以下结论： 1)由实验得到的硅纳米线的SEM图像和数据,我们得知在室温25℃下,采用浓度为0.2mol/L的HF与10mol/L Fe(NO3)3溶液配制的腐蚀溶液进行化学腐蚀45min,将得到形貌最好的硅纳米线阵列结构。在此最佳条件下制备的纳米线阵列,取向一致,结构均匀,纳米线平均长度约为6μm,纳米线直径为100-300nm,减反射效果良好。经测试分析,硅纳米线的反射率可达到5%以下。 2)对比硝酸银腐蚀溶液法制备硅纳米线的SEM图,硝酸铁腐蚀溶液可制出长度可控、结构均匀、质量较好的硅纳米线,并具有成本低廉的突出优点。廉价的的硝酸铁溶液刻蚀法制备硅纳米线达到了很好的减反射目的,拥有很大的应用潜力。 3)分析实验数据证明,在腐蚀溶液浓度一定的条件下,腐蚀时间越长,生成硅纳米线的长度越长,生长越趋于均匀；但得到硅纳米线反射率并非随着纳米线的增长,或者随着刻蚀时间的加长而降低,当腐蚀时间超过45min之后,反射率反而开始增大。因此在最佳腐蚀时间45min左右制得的硅纳米线质量最优。
[Abstract]:Nanostructures are the most promising research fields in the development of science and technology. Silicon nanowires are widely used in solar cells. Therefore, silicon nanowires are a new type of one-dimensional nano-semiconductors. Its novel optical and electrical properties have attracted much attention, and the research of silicon nanowires has become one of the hotspots in the field of solar cells. The common methods of preparing silicon nanowires include laser ablation, chemical vapor deposition (CVD), oxide assisted growth, template preparation, pure chemical corrosion, etc. It is more suitable to prepare a certain number of silicon nanowires. At present, the corrosion solution prepared by hydrofluoric acid and silver nitrate solution is more mature. There is relatively little research on the etching method of iron nitrate solution based on the same preparation principle, and the cost of iron nitrate is only a few tens of that of silver nitrate, which is such a low cost advantage. It is of great significance to prepare silicon nanowires by chemical etching of iron nitrate. In this paper, the growth mechanism and preparation method of silicon nanowires are studied. The preparation conditions and range of wet etching silicon nanowires with hydrofluoric acid and iron nitrate corrosion solution were discussed. The samples with different concentration of corrosion solution and different corrosion time at room temperature were detected by scanning electron microscope. The surface morphology of silicon nanowires was obtained, and the following conclusions were obtained by analyzing the surface morphology of the samples:. 1) from the experimental SEM images and data of silicon nanowires, we know that at 25 鈩，

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