Sol-Gel法制备AZO薄膜及其性能研究

发布时间：2018-03-20 16:33

  本文选题：溶胶-凝胶法　切入点：AZO薄膜　出处：《武汉理工大学》2010年硕士论文　论文类型：学位论文

【摘要】： 铝掺杂氧化锌(AZO)薄膜,一种新兴的宽禁带半导体材料,其透明导电性可广泛应用于制备透明电极和太阳能电池的透明窗口材料,其紫外发光性能可应用于紫外探测器和激光器。AZO薄膜的制备方法主要有磁控溅射,化学气相沉积以及溶胶-凝胶等方法。制备具有可重复性和稳定性的大面积均匀透明导电氧化锌薄膜是目前研究的热点,本论文以溶胶-凝胶法为制备方法,制备了具有高透光率,较低电阻率和一定光致发光性能的AZO薄膜。 本论文以二水合乙酸锌作为锌源,六水氯化铝作为铝源,乙二醇甲醚作为有机溶剂,单乙醇胺作为稳定剂,按照一定比例混合,配置成溶胶,并通过旋涂镀膜和退火热处理的方法制备了具有一定光学性能和电学性能的AZO薄膜,讨论了不同衬底,不同退火温度、不同掺杂量、梯度掺杂、缓冲层对AZO薄膜结构形貌、光学性能和电学性能的影响。 实验结果表明,硅衬底比玻璃衬底更利于制备具有c轴择优取向的高质量AZO薄膜,且硅衬底上制备的AZO薄膜具有更低的电阻率。硅衬底上铝掺杂量为1.0at%,退火温度为600℃,退火时间为180min时,可以获得具有优异光学性能和电学性能的AZO薄膜,该薄膜的最低电阻率可达4.64×10-3Ω·cm,其尖锐的本征发光峰和近紫外发光峰也表明该薄膜具有较完整的晶体结构；AZO薄膜的透光率受退火温度和掺杂浓度的影响不大,主要受薄膜厚度影响。随铝掺入量的增加,AZO薄膜的表面平整度下降,电导率下降,本征发光峰强度降低,可见光区发光峰强度明显升高；但梯度掺杂的AZO薄膜表面平整度和均匀度有明显提高,而且可以在较大的退火温度区间内获得较稳定的低电阻率,以及较强的本征发光峰；MgO缓冲层的加入使的具有优异光学性能和电学性能的AZO薄膜更容易制备,明显提高了薄膜的质量,而且提高了所制备薄膜的稳定性。室温下ZnO的禁带宽度为3.2eV,铝的掺杂明显提高了ZnO薄膜的禁带宽度,AZO薄膜的禁带宽度随退火温度的升高逐渐降低,随铝掺杂浓度的增加而逐渐升高。
[Abstract]:Aluminum-doped zinc oxide (AZO) thin film is a new wide band gap semiconductor material. Its transparent conductivity can be widely used to prepare transparent window materials for transparent electrodes and solar cells. The UV luminescent properties can be used in the preparation of UV detectors and laser. AZO thin films are magnetron sputtering. Chemical Vapor deposition (CVD) and sol-gel method. The preparation of large area uniform transparent conductive zinc oxide thin films with reproducibility and stability is a hot topic. In this thesis, sol-gel method is used as the preparation method. AZO thin films with high transmittance, low resistivity and certain photoluminescence properties were prepared. In this thesis, zinc acetate dihydrate was used as zinc source, aluminum chloride hexahydrate as aluminum source, ethylene glycol methyl ether as organic solvent, monoethanolamine as stabilizer, and then mixed into sol according to a certain proportion. AZO thin films with certain optical and electrical properties were prepared by spin-coating and annealing heat treatment. The structure and morphology of AZO thin films were discussed with different substrate, different annealing temperature, different doping amount, gradient doping and buffer layer. The influence of optical and electrical properties. The experimental results show that Si substrates are more favorable than glass substrates in the preparation of high quality AZO films with c-axis preferred orientation, and the AZO films prepared on Si substrates have lower resistivity. The Al doping amount on Si substrates is 1.0 atts. The annealing temperature is 600 鈩，

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