模板法制备CdSe纳米材料及其光电性能（英文）

发布时间：2018-03-21 23:04

  本文选题：CdSe纳米材料　切入点：退火　出处：《无机化学学报》2017年12期 　论文类型：期刊论文

【摘要】：采用电化学沉积法,在阳极氧化铝(AAO)模板中成功制备出CdSe纳米管和纳米线。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射分析(XRD)和能量色散X射线光谱仪(EDS)对材料的形貌、结构和元素组成进行了表征。借助紫外-可见吸收光谱等对材料光催化活性进行了研究。结果表明:通过控制沉积电量可成功制备CdSe纳米管和纳米线;CdSe纳米材料为立方晶型与六方晶型的混合,经350℃退火处理后,CdSe纳米材料中由立方晶型向六方晶型转变,光照开路电位差值明显增强,在0 V(vs SCE)电位下的光照电流密度也有所提高,光电转换性能增强;CdSe纳米线的吸收边在710 nm左右,禁带宽度约为1.85 eV,CdSe纳米管相对于CdSe纳米线具有更高的光电转换性能和光催化活性,经7 h光照后,罗丹明B降解效率高达53.93%。另外,本文还讨论了CdSe纳米材料在AAO模板孔壁的生长机理。
[Abstract]:CdSe nanotubes and nanowires were successfully prepared in anodic alumina (AAO) template by electrochemical deposition. The morphologies of CdSe nanotubes and nanowires were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectrometer (EDS). The structure and elemental composition were characterized. The photocatalytic activity of CdSe nanotubes and nanowires were studied by UV-Vis absorption spectra. The results showed that CdSe nanotubes and nanowires were successfully prepared by controlling the deposition quantity of electricity. Is a mixture of cubic and hexagonal crystals, After annealing at 350 鈩，

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