单靶磁控溅射一步法制备CIGS薄膜

发布时间：2018-03-23 15:11

本文选题：铜铟镓硒　切入点：单靶磁控溅射　出处：《电子科技大学》2011年硕士论文

【摘要】：铜铟镓硒(CIGS)薄膜太阳能电池具有抗辐射能力强、光电转化效率高、工作性能稳定等特点,是最有发展前景的太阳能电池之一。CIGS光吸收层薄膜的主要制备方法是多源共蒸发法和溅射-硒化法。用共蒸发法制备的CIGS器件的光电转换效率已经达到20.3%,是目前CIGS薄膜太阳能电池的最高转化效率纪录。但是共蒸发法工艺难度大、成品率低、原料利用率低。溅射-硒化工艺不仅可大面制备CIGS薄膜,原材料利用率高,而且溅射法制备的前驱体薄膜致密性高,组分均匀性好,元素的化学配比可调。缺点是硒化工艺耗时长、产率低。鉴于目前CIGS光吸收层薄膜制备工艺的优缺点,本论文创新性的采用磁控溅射CIGS四元化合物靶,并省去后硒化或退火处理,一步法制备CIGS薄膜。在此,对CIGS薄膜的制备工艺进行了较为系统的探索研究,主要研究内容如下: (1)研究了背电极Mo层对CIGS层形貌和结晶性的影响。通过观察不同条件下沉积的Mo层对CIGS层表面形貌、薄膜结晶性的影响,最终确定Mo层的最佳溅射参数。 (2)以磁控溅射的衬底温度、溅射气压、靶基距和溅射功率这四个主要参数为出发点,详细研究溅射参数对CIGS薄膜结晶性、表面形貌、薄膜致密度和薄膜生长机理的影响。通过改善溅射参数,最终制备出结晶性好、平整致密的CIGS薄膜。 (3)首次观察到CIGS微米柱。在低溅射功率、高溅射气压、高衬底温度条件下沉积的CIGS薄膜会出现直径在几百纳米到数微米的微米柱。通过SEM对CIGS微米柱进行形貌观察,并以此对其生长机理进行了探讨。 (4)研究CIGS薄膜太阳能电池的制备工艺,并制备出无镉CIGS薄膜太阳能电池。对制备出的CIGS薄膜太阳能电池的输出特性进行测量,依据输出曲线对电池制备工艺进行评析。
[Abstract]:Copper indium gallium selenite (CIGS) thin film solar cells have the advantages of strong radiation resistance, high photoelectric conversion efficiency and stable working performance. The main preparation methods of CIGS optical absorption layer thin films are multi-source co-evaporation and sputtering and selenization. The photoelectric conversion efficiency of CIGS devices prepared by co-evaporation has reached 20.3, which is at present. The highest conversion efficiency of CIGS thin film solar cells is recorded. But the co-evaporation process is very difficult. The sputtering and selenization process can not only produce CIGS thin films on a large surface, but also have high density and good homogeneity of the precursor films prepared by sputtering, and the utilization of raw materials is high, the yield of products is low and the utilization rate of raw materials is low. The chemical ratio of elements can be adjusted. The disadvantage is that the selenization process takes a long time and the yield is low. In view of the advantages and disadvantages of the current preparation process of CIGS optical absorption film, in this paper, the magnetron sputtering CIGS quaternary compound target is innovatively used, and the CIGS thin film is prepared by one step method without se treatment or annealing. The preparation process of CIGS thin films is studied systematically. The main contents are as follows:. The effect of Mo layer on the morphology and crystallinity of CIGS layer was studied. The optimum sputtering parameters of Mo layer were determined by observing the effect of Mo layer on surface morphology and crystallinity of CIGS layer under different conditions. Based on the four main parameters of magnetron sputtering, such as substrate temperature, sputtering pressure, target distance and sputtering power, the effects of sputtering parameters on the crystallinity and surface morphology of CIGS thin films were studied in detail. By improving the sputtering parameters, CIGS thin films with good crystallinity and flat density were prepared. CIGS films deposited at low sputtering power, high sputtering pressure and high substrate temperature will have micron columns ranging from several hundred nanometers to several microns in diameter. The morphology of CIGS micron columns will be observed by SEM. The growth mechanism was discussed. (4) the preparation process of CIGS thin film solar cell is studied, and the cadmium free CIGS thin film solar cell is prepared. The output characteristics of the prepared CIGS thin film solar cell are measured, and the preparation process of the cell is evaluated according to the output curve.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：TM914.4

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