高功率脉冲非平衡磁控溅射法制备CrN_x膜和Cu膜及其沉积特性的研究

发布时间：2018-03-27 06:06

本文选题：高功率脉冲磁控溅射　切入点：CrNx薄膜　出处：《大连理工大学》2011年硕士论文

【摘要】：高功率脉冲磁控溅射(HPPMS)技术由于具有溅射粒子离化率高,等离子体密度高,功率密度可到达几个kW/cm2,离子电流可到达几个A/cm2,并具有溅射粒子能量大等特点,可以沉积致密、高性能薄膜,对薄膜的制备和改性具有良好的作用,而且作为一种新技术在国外已经得到广泛研究,但在国内尚未见报道,因此对高功率脉冲(HPPMS)技术的研究具有非常重要的意义。本论文采用高功率脉冲非平衡磁控溅射(HPPUMS)技术,制备了一系列的CrNx薄膜和Cu薄膜,并对HPPUMS技术的工作参数与沉积特性之间进行了研究。本文第三章采用高功率脉冲非平衡磁控溅射技术(HPPUMS)能够制备一系列的CrNx薄膜,并与在相同条件下采用中频磁控溅射(MFMS)技术制备的CrNx薄膜进行了对比研究。结果发现：在相同膜厚的条件下,与中频磁控溅射(MFMS)技术相比,HPPUMS技术能够制备出综合性能较好的CrNx薄膜：具有较高的硬度、较高结合强度和低摩擦系数；沉积生成物是由CrN和Cr2N组成的两相膜。并采用Cr靶对HPPUMS放电的脉冲电压和脉冲电流进行了诊断,结果表明：工作气压,反应气体N2分别对HPPUMS放电的脉冲电压、脉冲电流和脉冲频率都有影响。本文第四章采用高功率脉冲非平衡磁控溅射(HPPUMS)技术沉积制备Cu薄膜。研究发现：工作气压、基片负偏压、线圈励磁电流等沉积参数对Cu薄膜的沉积速率有明显的影响。针对高功率脉冲磁控溅射技术沉积薄膜速度低的缺点,可以采用外加励磁线圈的方法加以改善,改善度可到达55.29%。高功率脉冲非平衡磁控溅射对Cu靶的离化率高达28.37%以上,而且等离子体密度可以达到1019/m3数量级。
[Abstract]:The high power pulsed magnetron sputtering (HPPMS) technique has the advantages of high ionization rate of sputtering particles, high plasma density, power density up to several kW / cm ~ 2, ion current up to several A / M ~ (2), and high energy of sputtering particles. High performance thin films have a good effect on the preparation and modification of films, and as a new technology has been widely studied abroad, but has not been reported in China. Therefore, it is of great significance to study the high power pulsed HPPMS technology. In this thesis, a series of CrNx and Cu thin films were prepared by using the high power pulsed unbalanced magnetron sputtering (HPPUMS) technique. The relationship between working parameters and deposition characteristics of HPPUMS technology is also studied. In chapter 3, a series of CrNx thin films can be prepared by using high power pulsed unbalanced magnetron sputtering technique. The results are compared with those of CrNx films prepared by if magnetron sputtering under the same conditions. The results show that the films are of the same thickness. Compared with the intermediate frequency magnetron sputtering (MF MS) technique, the CrNx thin films with better comprehensive properties can be prepared by HP-PUMS technique, with higher hardness, higher bonding strength and lower friction coefficient. The deposition product is a two-phase film composed of CrN and Cr2N. The pulse voltage and pulse current of HPPUMS discharge are diagnosed by Cr target. The results show that the pulse voltage of HPPUMS discharge is affected by the working pressure and the reaction gas N2, respectively. Both the pulse current and the pulse frequency have an effect. In chapter 4, Cu thin films were deposited by high power pulsed unbalanced magnetron sputtering (HPPUMS) technique. The deposition parameters such as coil excitation current have obvious influence on the deposition rate of Cu thin film. In view of the disadvantage of low deposition speed of high power pulsed magnetron sputtering technology, the method of external excitation coil can be used to improve the deposition rate of Cu film. The improvement can reach 55.29. The ionization rate of Cu target by high power pulsed unbalanced magnetron sputtering is over 28.37%, and the plasma density can reach 1019/m3 order.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：O484.1

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