化学气相沉积法制备石墨烯晶畴的氧气刻蚀现象研究

发布时间：2018-04-26 20:36

  本文选题：石墨烯 + 化学气相沉积　； 参考：《人工晶体学报》2017年06期

【摘要】：利用化学气相沉积法在抛光铜衬底上制备出六角形石墨烯晶畴,并对石墨烯晶畴进行氧气刻蚀。刻蚀完成后,利用光学显微镜和扫描电子显微镜观察到石墨烯晶畴表面的褶皱被刻蚀成网络状和短线状形貌的刻蚀条纹,并且刻蚀条纹的密度分布差异较大。通过电子背散射衍射测试证明了铜衬底的晶向与褶皱的形貌和密度分布有密切关系,不同的铜衬底晶向会影响褶皱的形貌和密度分布。通过改变刻蚀时间和刻蚀温度,发现刻蚀温度对石墨烯的氧气刻蚀具有更重要的影响,当刻蚀温度高于250℃时,刻蚀速率明显提高。这种氧气刻蚀方法,为观察石墨烯表面褶皱的形态和密度分布提供了一种便捷的途径。
[Abstract]:Hexagonal graphene domains were prepared on polished copper substrates by chemical vapor deposition, and the graphene domains were etched by oxygen. After etching, the folds of graphene domain surface were etched into network-like and short-line stripes by optical microscope and scanning electron microscope, and the density distribution of etching stripes varied greatly. The results of electron backscatter diffraction show that the crystal direction of copper substrate is closely related to the morphology and density distribution of the fold, and the different orientation of the copper substrate will affect the morphology and density distribution of the fold. By changing the etching time and etching temperature, it is found that the etching temperature has a more important effect on the oxygen etching of graphene. When the etching temperature is above 250 鈩，

本文编号：1807554