脉冲激光沉积法制备铟掺杂氧化镉薄膜及其光电性能研究

发布时间：2018-05-18 12:39

本文选题：氧化镉 + 脉冲激光沉积　；参考：《吉林大学》2010年硕士论文

【摘要】： 本文使用脉冲激光沉积法(PLD)制备了铟掺杂氧化镉(In-CdO)透明导电薄膜,实验以Cd-In合金为靶材,在氧气气氛下以石英玻璃为基体进行薄膜沉积。深入研究了薄膜中In含量以及沉积基体温度对In-CdO薄膜结构和光电性能的影响。研究发现,薄膜的结构及光电性能对In含量以及沉积基体温度变化敏感。In掺杂减弱了薄膜(200)晶面的优势生长,且使晶格常数有微小变化。所有的In-CdO薄膜在可见光区域内都呈现出较高的透光率,特别是在波长500 nm左右的区域呈现出最高的透光率,这是太阳光谱能量最强的波段。当In的浓度达到3.9 wt%时,In-CdO薄膜具有最高的载流子浓度及最低的电阻率,且禁带宽度明显增加。当In的浓度进一步增加至5.6 wt%时,薄膜中有In2O3形成,导致In-CdO薄膜的光电性能略微降低。当沉积温度为100°C和200°C时,得到的薄膜是In-CdO与Cd的复合薄膜。基体温度升高,薄膜的(200)晶面衍射峰强度降低,晶格常数逐渐减小。在300°C基体温度下沉积的薄膜的晶粒最均匀,表面最致密平滑,且获得了最低的电阻率和最高的载流子浓度与迁移率。当薄膜沉积温度从300°C升至500°C时,出现了沉积基体温度升高,载流子浓度降低,禁带宽度反而增大的现象。
[Abstract]:In this paper, indium doped cadmium oxide In-CdO (In-CdO) transparent conductive thin films were prepared by pulsed laser deposition (PLD). Cd-In alloy was used as the target and quartz glass as substrate in oxygen atmosphere. The effects of in content and substrate temperature on the structure and optoelectronic properties of In-CdO thin films were investigated. It is found that the structure and photoelectric properties of the films are sensitive to the changes of in content and substrate temperature. Doping in weakens the dominant growth of the films and makes the lattice constants change slightly. All In-CdO thin films exhibit high transmittance in the visible region, especially the highest transmittance in the wavelength of 500nm, which is the most energy band of the solar spectrum. When the concentration of in is 3.9 wt%, the film has the highest carrier concentration and the lowest resistivity, and the band gap increases obviously. When the concentration of in is further increased to 5.6 wt%, In2O3 is formed in the film, which results in a slight decrease in the photoelectric properties of the In-CdO film. When the deposition temperature is 100 掳C and 200 掳C, the film is a composite film of In-CdO and CD. With the increase of substrate temperature, the diffraction peak intensity of crystal plane decreases and the lattice constant decreases. The films deposited at 300 掳C substrate temperature have the most uniform grain size, the most compact and smooth surface, and the lowest resistivity, the highest carrier concentration and mobility. When the deposition temperature increases from 300 掳C to 500 掳C, the substrate temperature increases, the carrier concentration decreases and the band gap increases.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：TN304

【共引文献】