腐蚀法制备选择性发射极单晶硅太阳能电池的研究

发布时间：2018-05-30 22:17

本文选题：腐蚀 + 选择性发射极　；参考：《北京交通大学》2011年硕士论文

【摘要】：摘要：本文主要研究了腐蚀法制备单晶硅选择性发射极太阳能电池。选择性发射极的核心是表面的重/轻掺杂区发射极,本文通过深入的研究最终确定了制备单晶硅选择性发射极太阳能电池的新扩散和腐蚀工艺：重扩散方阻为35Ω/□,腐蚀后非电极区方阻在70-105Ω/□之间为佳。掩膜印刷和电极印刷两者的对位印刷对选择性发射极太阳能电池的制备也很重要,本文通过实验分析了印刷机和刮刀对对位印刷的影响。发现同一台印刷机,同一块正银网版,同一套刮刀,对位精度高；同一台印刷机,正银与掩膜网版配套,印刷掩膜和正银不是同一套刮刀,对位存在问题,但基本满足要求。最后通过实验片和正常片的测试结果对比,研究了选择性发射极太阳能电池对基本特征参数的影响,通过实验发现,SE工艺在开路电压Voc上增加了0.008V,在短路电流Jsc上增加了0.31A,在填充因子FF上增加了0.89,在效率上提高了0.72%。
[Abstract]:Abstract: the preparation of monocrystalline silicon selective emitter solar cells by corrosion method was studied in this paper. The core of the selective emitter is the heavy / light doped emitter on the surface. In this paper, the new diffusion and corrosion process for the preparation of monocrystalline silicon selective emitter solar cell is determined through in-depth study: the heavy diffusion square resistance is 35 惟 / -, The square resistance of the non-electrode region after corrosion is between 70 and 105 惟 / -. The opposite printing of mask printing and electrode printing is also very important for the preparation of selective emitter solar cells. In this paper, the effects of printing press and scraper on position printing are analyzed experimentally. It is found that the same printing machine, the same block of silver screen plate, the same set of scraper, and the same printing machine, the positive silver and the mask plate are matched, the printing mask and the positive silver are not the same set of scraper, and there are problems in the opposite position, but basically meet the requirements. Finally, the effects of selective emitter solar cells on the basic characteristic parameters are studied by comparing the experimental results with the normal ones. The experimental results show that the open circuit voltage (Voc), short circuit current (Jsc) and filling factor (FF) are increased by 0.008V, 0.31A, 0.89 and 0.72%, respectively, in the open circuit voltage (Voc), the short-circuit current (Jsc) and the filling factor (FF).
【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：TM914.4

【引证文献】