太阳能电池CIS粉体的回流反应法制备及特性研究

发布时间：2018-06-06 20:31

本文选题：薄膜太阳能电池 + CIS系粉体　；参考：《中南大学》2011年硕士论文

【摘要】：CIS系太阳电池是最有潜力的薄膜太阳能电池之一,但复杂、难控的CIS系吸收层薄膜的制备技术是其实现大规模产业化的瓶颈。CIS系粉体材料的研发可为吸收层薄膜的制备提供多种简洁的思路,有望大幅度改进薄膜制备工艺、降低生产成本。本论文针对CIS系粉体材料的制备研究中存在的问题,对低成本、高质量CIS系粉体的可量产化制备技术进行了探索研究,以金属氯化物和Se/S为原料,在适宜的有机溶剂中通过回流反应法制备了CIS系粉体。开展的主要工作及研究结果简述如下： (1)以乙二胺为溶剂,通过回流反应结合快速热处理的方法制备了CuInSe_2粉体；研究了各工艺参数对产物的影响,并分析了反应机理。结果表明,回流反应产物为Cu和In的二元硒化物,通过热处理可生成单相黄铜矿型CuInSe_2,产物元素配比接近理想比例；提高热处理温度和增加热处理时间(30 min内)有利于CuInSe_2相的完全形成和结晶质量的改善,但热处理时间的延长对产物微观形貌有不良影响；600℃/30 min是较佳的热处理条件。 (2)以三乙烯四胺为溶剂,通过回流反应直接制备了CIS粉体,研究了反应温度和时间等参数对产物各种性质的影响,探讨了合成机理。结果表明：以三乙烯四胺为溶剂可有效制备单相CuInSe_2粉体,并且反应时间大大缩短,产物的元素配比良好,形貌规则。反应温度的提高有利于反应的加快和良好的结晶,200℃/1～2 h是较佳的反应条件。而同样工艺条件用于CuInS_2粉体制备时,则出现少量二元杂相,采用三乙烯四胺+乙二醇混合溶剂可得到单相CuInS_2,相比CuInSe_2粉体,其成相更为容易,粒子更为细小均匀。 (3)采用三乙烯四胺+乙二醇混合溶剂通过回流反应制备了CuIn(S_xSe_(1-x))_2粉体,研究了S的掺入效果和S含量对产物各种性质的影响,并考察了不同S含量下CuIn(S_xSe_(1-x))_2的光学和电学性能。结果表明：制得的CuIn(S_xSe_(1-x))_2粉体为单相黄铜矿型结构,各元素比例与既定配比十分接近；产物微观形貌良好,粒子接近球形且尺寸较小分布均匀；S的掺入对CIS材料的带隙宽度有明显的提升作用；随S含量的增长,CuIn(S_xSe_(1-x))_2的载流子浓度逐渐减小,迁移率和电阻率逐渐增大,在S/(S+Se)为0～0.6的范围内,CuIn(S_xSe_(1-x))_2为p型半导体,各电学特性符合作为太阳电池吸收层的要求。
[Abstract]:The CIS solar cell is one of the most potential thin film solar cells. However, the preparation technology of the complex and difficult CIS absorption film is the bottleneck of the large-scale industrialization. The research and development of the bottleneck.CIS powder material can provide a variety of concise ideas for the preparation of the absorbing layer film. It is expected that the preparation technology of the film can be greatly improved and the production is reduced. In this paper, in order to solve the problems in the preparation of CIS system powder materials, a research on the preparation technology of low cost and high quality CIS powder is explored. The CIS system powder is prepared by reflux reaction method with metal chloride and Se/S as raw material. The main work and research results are simply carried out. The following are as follows:
(1) CuInSe_2 powder was prepared by reflux reaction combined with rapid heat treatment with ethylenediamine as solvent. The effect of various process parameters on the product was studied and the reaction mechanism was analyzed. The results showed that the reflux product was two element selenide of In and Cu and In, and the single phase chalcopyrite type CuInSe_2 could be generated by heat treatment. Near ideal proportion, increasing the heat treatment temperature and increasing the heat treatment time (30 min) is beneficial to the complete formation of CuInSe_2 phase and the improvement of the crystalline quality, but the prolongation of the heat treatment time has a bad effect on the micromorphology of the products, and the /30 min is a better heat treatment condition.
(2) CIS powders were prepared by reflux reaction with three ethylene four amine as solvent. The effects of reaction temperature and time on the properties of the products were studied. The synthesis mechanism was discussed. The results showed that the single phase CuInSe_2 powder was prepared with three ethylene four amine as the solvent, and the reaction time was greatly shortened and the ratio of the product was good. Good morphology rules. The increase of reaction temperature is beneficial to the quicker and better crystallization of the reaction. The better reaction condition is /1 ~ 2 h at 200 c. While the same process conditions are used in the preparation of CuInS_2 powder, a small amount of two element heterozygosity is found, and a single phase CuInS_2 can be obtained by using three ethylene four amine + glycol mixed solvent. Compared to the CuInSe_2 powder, the phase is more in phase. To be easy, the particles are even smaller and even.
(3) CuIn (S_xSe_ (1-x)) _2 powder was prepared by reflux reaction of three ethylene four amine + ethylene glycol. The effects of S incorporation and S content on the properties of the products were studied. The optical and electrical properties of CuIn (S_xSe_ (1-x)) _2 under different S contents were investigated. The results showed that the prepared powder was Dan Xianghuang. The proportion of each element is very close to the established proportion of the copper ore structure, the product micromorphology is good, the particle is close to the sphere and the size distribution is uniform. The doping of S has an obvious lifting effect on the band gap width of the CIS material. With the increase of S content, the carrier concentration of CuIn (S_xSe_ (1-x)) _2 gradually decreases, and the mobility and resistivity increase gradually. In the range of S/ (S+Se) from 0 to 0.6, CuIn (S_xSe_ (1-x)) _2 is p type semiconductor, and the electrical characteristics meet the requirements of solar cell absorbing layer.
【学位授予单位】：中南大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：TB383.3

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