直流磁控反应溅射法制备YYC缓冲层

发布时间：2018-06-11 10:22

本文选题：反应溅射 + 过渡层　；参考：《电子科技大学》2010年硕士论文

【摘要】： 第二代YBCO高温超导带材具有更高的临界电流密度和更优的高场下性能,使其成为最具发展应用前景的超导带材,为各国所广泛关注。而在柔性的NiW合金基带上进行YBCO薄膜的生长,必须解决超导层与金属基带的晶格失配和互扩散问题。因此,高质量缓冲层的制备就成为了YBCO带材发展的关键。由于磁控反应溅射具有工艺简单、易于操作等特点,本论文使用直流磁控反应溅射法在Ni-5at.%W合金基带上进行三层缓冲层Y_2O_3/YSZ/CeO_2(YYC)的研究制备。具体内容如下: 1、采用直流磁控反应溅射方法制备Y_2O_3种子层,通过对沉积温度、水分压、总气压及卷绕速率的研究,寻找到最优薄膜生长工艺。在此工艺下制备的Y_2O_3种子层为完全c轴取向,面内外半高宽(△φ,△ω)分别为5.4°, 4.4°,表面均方根(RMS)粗糙度为4.3nm。 2、在Y_2O_3种子层的基础上继续进行阻挡层YSZ和模板层CeO_2的生长,成功制备出面内外半高宽分别为5.8°和3.9°,表面粗糙度(RMS)为6.2nm的YYC缓冲层。采用电子背散射衍射(EBSD)分析CeO_2模板层的均匀性,结果表明CeO_2表面均匀致密,小角度晶界均在10度以下。 3、对YYC缓冲层进行双面一致性分析得到,双面缓冲层的面内外半高宽差异均小于0.3°,晶粒粒径均小于70nm,表面粗糙度(RMS)差异小于0.5nm。50cm缓冲层带材各层薄膜△φ在5°与6°之间,△ω在4°与6°之间,模板层CeO_2的△φ变化量小于0.5°,△ω变化量小于1°,表面粗糙度RMS在6nm与7nm之间。 4、在YYC三层缓冲层上进行YBCO超导层的生长,分别从种子层、阻挡层和模板层研究各层对YBCO超导层的影响。在YYC缓冲层上制备的YBCO带材面内外取向分别为5.3°和3.2°,单面最高Jc值为1.3MA/cm~2,双面最高Jc值为1.0 MA/cm~2。
[Abstract]:The second generation YBCO high temperature superconducting tape with higher critical current density and better performance under high field makes it become the most promising superconducting tape which has been widely concerned by many countries. The problem of lattice mismatch and interdiffusion between superconducting layer and metal substrate must be solved when YBCO thin film is grown on flexible NiW alloy substrate. Therefore, the preparation of high-quality buffer layer has become the key to the development of YBCO strip. Because the magnetron reactive sputtering has the characteristics of simple process and easy operation, a three-layer buffer layer Y _ 2O _ 3 / YSZ / CEO _ 2Y _ YYC _ Cwas prepared on Ni-5at.W alloy base band by DC magnetron reactive sputtering. The main contents are as follows: 1. Ys _ 2O _ 3 seed layer was prepared by DC magnetron reactive sputtering. Through the study of deposition temperature, water pressure, total pressure and winding rate, the optimal growth process of Ys _ 2O _ 3 thin film was found. The seed layer of Ys _ 2O _ 3 prepared under this process is completely c-oriented, and the in-plane half-maximum width (蠁, 蠅) is 5.4 掳and 4.4 掳, respectively, and the roughness of RMSs is 4.3 nm 路2. The growth of the blocking layer YSZ and the template layer CeOS2 is continued on the basis of the Y _ 2O _ 3 seed layer. The YYC buffer layer was successfully prepared with the half-width of 5.8 掳and 3.9 掳, respectively, and the surface roughness (RMS) was used as the buffer layer of 6.2nm. Electron backscatter diffraction (EBSD) was used to analyze the uniformity of CEO _ 2 template layer. The results showed that the surface of CEO _ 2 was homogeneous and dense, and the grain boundaries of small angle were all below 10 degrees. The results of double-sided consistency analysis of YYC buffer layer were obtained. The difference in the width of both sides of buffer layer is less than 0.3 掳, the grain size is less than 70 nm, the difference of surface roughness is less than that of 0.5nm.50cm buffer layer film 蠁 is between 5 掳and 6 掳, 蠅 is between 4 掳and 6 掳. The 蠁 variation of CeO2 and 蠅 are less than 0.5 掳and 1 掳, respectively. The surface roughness is between 6nm and 7nm. 4. YBCO superconducting layer is grown on YYC three-layer buffer layer from seed layer, respectively. The influence of each layer on YBCO superconducting layer is studied. The in-plane and in-plane orientations of YBCO strips prepared on YYC buffer layer are 5.3 掳and 3.2 掳, respectively. The highest JC on one side is 1.3 Ma / cm ~ (-2), and the highest value on both sides is 1.0 Ma / cm ~ (2).
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：TM26

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