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GH4099薄板表面红外高辐射涂层的粉浆法制备与性能表征

发布时间:2018-10-21 15:23
【摘要】:本文以SiC为高辐射填料,分别以硅溶胶和正硅酸乙酯(TEOS)为溶剂采用粉浆法在GH4099薄板表面制备了红外高辐射涂层,研究了涂层的制备工艺,并对涂层的性能进行了表征。 首先采用等离子喷涂法在GH4099上制备ZrO_2过渡层,之后采用粉浆法在ZrO_2过渡层上制备高辐射层,优化设计后得出了高辐射涂层的最佳制备工艺:硅溶胶为溶剂的涂层按配比100:8:2:0.25、100:4:2:0.25、100:0:2:0.25:0.8逐层涂刷;干燥制度是先室温干燥,再300℃烧结脱水;烧结工艺是首先用硅溶胶浸渍2 min后烧结1h,烧结之后再用硅溶胶浸渍,之后再300℃烧结0.5h,升温速率均为1℃/min。 TEOS为溶剂的涂层按配比16:3:1:0.2、16:1.5:1:0.2、16:0:1:0.2:0.4逐层涂刷;采取干燥制度是先40℃水蒸气干燥,再室温干燥;烧结工艺为涂层首先300℃预烧结,保温30min。自然冷却后利用硅溶胶浸渍2 min后烧结1h,升温速率均是1℃/min。 研究表明:硅溶胶为溶剂的涂层干燥过程中出现微裂纹,烧结温度对涂层的表面与截面形貌并无明显影响,而TEOS为溶剂的涂层干燥过程涂层基本不产生裂纹,烧结温度提高后涂层的致密性提高,900℃烧结后的涂层表层中出现了玻璃相;在涂层界面处存在成分突变,高辐射层内ZrO_2存在成分梯度,并且表层的XRD只有YSZ、m-ZrO_2和?-SiC的衍射峰;高辐射层的硬度与弹性模量的值均随着烧结温度的升高而增加,不同温度烧结的涂层在900℃ 室温进行100次抗热震性试验后均没有产生宏观裂纹;随着烧结温度与测量温度的升高,涂层的发射率增大,可达0.92,降低涂层厚度发射率降低,TEOS为溶剂的涂层发射率整体上高于硅溶胶为溶剂的涂层发射率;1050℃保温2h后,TEOS为溶剂的涂层表面出现了玻璃相,封填了涂层表面的微裂纹。
[Abstract]:In this paper, infrared high radiation coating was prepared on the surface of GH4099 sheet by slurry method using silica sol and ethyl orthosilicate (TEOS) as solvent, using SiC as high radiation filler. The preparation process of the coating was studied and the properties of the coating were characterized. First, plasma spraying method was used to prepare ZrO_2 transition layer on GH4099, and then high radiation layer was prepared on ZrO_2 transition layer by slurry method. After optimized design, the optimum preparation technology of high radiation coating was obtained: the coating with silica sol as solvent was brushed layer by layer according to the ratio of 100: 8: 2: 2: 0.25: 100: 4: 2: 0.25: 100: 0: 0: 0: 0: 0.25: 0.8; the drying system was first dry at room temperature and then dewatered at 300 鈩,

本文编号:2285517

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