HVPE法制备AlN单晶薄膜
发布时间：2018-11-08 07:35
【摘要】：采用氢化物气相外延(HVPE)在6H-SiC衬底上生长AlN单晶薄膜。利用热力学理论计算源区Al-NH体系中的物质平衡,表明源区温度为800~900K时,HCl与AlCl3气体分压为1∶3,主要产物是对石英管腐蚀较低的AlCl_3。控制源区温度800~900K,生长区温度1 373K,HCl流量25cm~3/min,分析NH_3和HCl流量比(R)对薄膜形貌及结晶度的影响。R=0.5时,获得表面平整光滑且厚度为7μm的AlN单晶。
[Abstract]:Single crystal AlN thin films were grown on 6H-SiC substrates by hydride vapor phase epitaxy (HVPE). The thermodynamic theory is used to calculate the mass equilibrium of Al-NH system in source region. The results show that the partial pressure of HCl and AlCl3 gas is 1: 3 when the source temperature is 800,900K, and the main product is AlCl_3. with low corrosion to quartz tube. The influence of NH_3 / HCl flow ratio (R) on the morphology and crystallinity of AlN films was analyzed by controlling the source temperature of 800 ~ 900K and the growth zone temperature of 1373 KG / HCl at 25 cm ~ (-1) 路min. When R = 0.5, a smooth and smooth AlN crystal with a thickness of 7 渭 m was obtained.
【作者单位】： 中国电子科技集团公司第四十六研究所;
【基金】：国家重点研究基金资助项目
【分类号】：O484.1
[Abstract]:Single crystal AlN thin films were grown on 6H-SiC substrates by hydride vapor phase epitaxy (HVPE). The thermodynamic theory is used to calculate the mass equilibrium of Al-NH system in source region. The results show that the partial pressure of HCl and AlCl3 gas is 1: 3 when the source temperature is 800,900K, and the main product is AlCl_3. with low corrosion to quartz tube. The influence of NH_3 / HCl flow ratio (R) on the morphology and crystallinity of AlN films was analyzed by controlling the source temperature of 800 ~ 900K and the growth zone temperature of 1373 KG / HCl at 25 cm ~ (-1) 路min. When R = 0.5, a smooth and smooth AlN crystal with a thickness of 7 渭 m was obtained.
【作者单位】： 中国电子科技集团公司第四十六研究所;
【基金】：国家重点研究基金资助项目
【分类号】：O484.1
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1 李毓轩;秦知福;;HVPE法制备AlN单晶薄膜[J];压电与声光;2016年03期
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