非晶硅锗薄膜PECVD法制备与特性研究
发布时间：2018-11-13 20:39
【摘要】： 在薄膜太阳电池研究中,位于N层和P层之间的Ⅰ层的研究显得格外重要。因为该层是整个薄膜电池的核心,是光生载流子的产生区,与薄膜电池的光电转换效率息息相关。所以为了提高薄膜电池在长波区域的吸收,拓展对太阳能光谱的响应,进一步提高薄膜电池的效率,我们对Ⅰ层薄膜进行了深入研究,为叠层太阳电池的研究奠定基础。 本文采用纯度为20%的SiH4和纯度为99.999%的GeH4做反应气体,用纯度99.99%的H2作为稀释气体,采用射频等离子体增强化学沉积法(RF-PECVD)制备了四个工艺条件系列的非晶硅锗薄膜,包括反应气体浓度、衬底温度、辉光功率、反应气体压强。然后对其结构特性、沉积速率、光学带隙和光敏性进行了深入的研究和探讨。结果表明：在我们的实验条件下,沉积速率将随着辉光功率的减小和反应气体压强的降低而增大,但随着温度的升高和反应气体浓度的增大的变化趋势并不明显；光学带隙将随着反应气体浓度的增大和温度的升高而变窄,但是其受辉光功率和反应气体压强的影响几乎可以忽略的；光敏性几乎不受衬底温度、辉光功率、反应气体压强的影响,但与反应气体浓度的联系则较为紧密,其先随着反应气体浓度的增大而增大然后则减小。
[Abstract]:In the study of thin film solar cells, the study of layer I between N layer and P layer is particularly important. Because this layer is the core of the whole thin film battery and the generation region of photogenerated carriers, it is closely related to the photoelectric conversion efficiency of the thin film battery. Therefore, in order to improve the absorption of thin film cells in the long wave region, expand the response to the solar spectrum, and further improve the efficiency of thin film cells, we have carried out a deep study of layer I thin films to lay a foundation for the study of stacked solar cells. In this paper, SiH4 with purity of 20% and GeH4 with purity of 99.999% were used as reaction gas and H2 with purity of 99.99% as dilution gas. Four series of amorphous silicon and germanium films were prepared by radio frequency plasma enhanced chemical deposition (RF-PECVD), including reaction gas concentration, substrate temperature, glow power and reaction gas pressure. Then, the structure, deposition rate, optical band gap and Guang Min property are studied. The results show that the deposition rate increases with the decrease of the glow power and the pressure of the reaction gas under our experimental conditions, but the trend is not obvious with the increase of the temperature and the concentration of the reaction gas. The optical band gap will narrow with the increase of reaction gas concentration and temperature, but the influence of glow power and reaction gas pressure can be neglected. Guang Min is almost independent of substrate temperature, glow power and reaction gas pressure, but is closely related to the concentration of the reaction gas, which increases at first and then decreases with the increase of the concentration of the reaction gas.
【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：O484.1
本文编号：2330358
[Abstract]:In the study of thin film solar cells, the study of layer I between N layer and P layer is particularly important. Because this layer is the core of the whole thin film battery and the generation region of photogenerated carriers, it is closely related to the photoelectric conversion efficiency of the thin film battery. Therefore, in order to improve the absorption of thin film cells in the long wave region, expand the response to the solar spectrum, and further improve the efficiency of thin film cells, we have carried out a deep study of layer I thin films to lay a foundation for the study of stacked solar cells. In this paper, SiH4 with purity of 20% and GeH4 with purity of 99.999% were used as reaction gas and H2 with purity of 99.99% as dilution gas. Four series of amorphous silicon and germanium films were prepared by radio frequency plasma enhanced chemical deposition (RF-PECVD), including reaction gas concentration, substrate temperature, glow power and reaction gas pressure. Then, the structure, deposition rate, optical band gap and Guang Min property are studied. The results show that the deposition rate increases with the decrease of the glow power and the pressure of the reaction gas under our experimental conditions, but the trend is not obvious with the increase of the temperature and the concentration of the reaction gas. The optical band gap will narrow with the increase of reaction gas concentration and temperature, but the influence of glow power and reaction gas pressure can be neglected. Guang Min is almost independent of substrate temperature, glow power and reaction gas pressure, but is closely related to the concentration of the reaction gas, which increases at first and then decreases with the increase of the concentration of the reaction gas.
【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：O484.1
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