在ITO衬底上电化学一步法制备CZTS薄膜
发布时间：2018-11-21 10:28
【摘要】：铜锌锡硫Cu2ZnSnS4 (CZTS)薄膜是一种新型的太阳电池材料。它是直接带隙p型半导体材料。它具有1.4-1.5 eV的禁带宽度,光吸收系数超过104cm-1。这些优异的性能使它成为一种很有发展前景的太阳能电池材料。 采用电化学一步法在ITO衬底上制备铜锌锡硫(CZTS)四元化合物薄膜。寻找适合CZTS薄膜沉积的条件。 使用线形扫描法研究材料沉积的电化学特性。分别采用恒压,恒流等多种方法研究薄膜的制备条件,成功制备出CZTS材料。分别使用X射线衍射谱分析材料结构,使用扫描电子显微镜观察其表面形貌,使用吸收谱研究其禁带宽度。发现了CZTS的生长情况与退火温度有很大的关系。在N2环境下,退火温度为500℃时,成功制备出具有硫镁钒结构的CZTS薄膜,并测得其禁带宽度接近理论值,约为1.5eV。 另外研究了沉积次数对结晶的影响。沉积三次的样品结晶程度比只沉积一次的样品结晶程度高。
[Abstract]:Copper-zinc-tin-sulfur Cu2ZnSnS4 (CZTS) film is a new type of solar cell material. It is a direct band gap p type semiconductor material. It has a band gap of 1.4-1.5 eV, and the optical absorption coefficient exceeds 104cm-1. These excellent properties make it a promising solar cell material. Copper, zinc, tin and sulfur (CZTS) quaternary compound thin films were prepared on ITO substrates by one step electrochemical method. To find suitable conditions for CZTS film deposition. The electrochemical properties of the deposited materials were studied by linear scanning method. The preparation conditions of CZTS films were studied by means of constant voltage and constant current, respectively, and the CZTS materials were successfully prepared. X-ray diffraction spectra were used to analyze the structure of the materials, scanning electron microscopy (SEM) was used to observe the surface morphology, and absorption spectra were used to study the bandgap. It is found that the growth of CZTS is closely related to the annealing temperature. CZTS thin films with magnesia-vanadium structure have been successfully prepared at N _ 2 and annealed at 500 鈩，
本文编号：2346708
[Abstract]:Copper-zinc-tin-sulfur Cu2ZnSnS4 (CZTS) film is a new type of solar cell material. It is a direct band gap p type semiconductor material. It has a band gap of 1.4-1.5 eV, and the optical absorption coefficient exceeds 104cm-1. These excellent properties make it a promising solar cell material. Copper, zinc, tin and sulfur (CZTS) quaternary compound thin films were prepared on ITO substrates by one step electrochemical method. To find suitable conditions for CZTS film deposition. The electrochemical properties of the deposited materials were studied by linear scanning method. The preparation conditions of CZTS films were studied by means of constant voltage and constant current, respectively, and the CZTS materials were successfully prepared. X-ray diffraction spectra were used to analyze the structure of the materials, scanning electron microscopy (SEM) was used to observe the surface morphology, and absorption spectra were used to study the bandgap. It is found that the growth of CZTS is closely related to the annealing temperature. CZTS thin films with magnesia-vanadium structure have been successfully prepared at N _ 2 and annealed at 500 鈩，
本文编号：2346708
本文链接：https://www.wllwen.com/shekelunwen/minzhuminquanlunwen/2346708.html
