热丝CVD法制备金刚石—碳化硅—硅化钴复合薄膜
发布时间：2019-01-03 18:53
【摘要】： 在硬质合金工具或部件表面沉积金刚石薄膜,可以大幅度提高工具或部件的耐磨性,延长其使用寿命,进而提高生产效率,但是金刚石薄膜与硬质合金基体间粘附性不足的问题制约了其应用。本论文采用氢气、甲烷和四甲基硅烷(TMS)混合气体作为反应气体,用热丝化学气相沉积法在硬质合金(WC-6wt.% Co)基体上沉积金刚石-碳化硅-硅化钴复合薄膜,并将此复合薄膜作为中间层,以提高金刚石薄膜与基体的粘附性。采用扫描电子显微镜(SEM)、电子探针(EPMA)、X射线衍射(XRD)、拉曼光谱(Raman)和洛氏C压痕法对薄膜的表面形貌、成分、结构以及粘附性进行了表征。 金刚石-碳化硅-硅化钴复合薄膜中含有金刚石、β-SiC和硅化钴(Co2Si、CoSi),在沉积过程中,金刚石和β-SiC晶粒竞争生长,硅化钴的形成源于基体中Co的扩散。金刚石-碳化硅-硅化钴复合薄膜的成分和结构可以通过调节气相中TMS的浓度和偏流来控制。随着TMS浓度的增加,膜中β-SiC含量增加,金刚石含量减少,且β-SiC和金刚石晶粒变小。正偏压促进金刚石的生长,并且增强金刚石的二次形核,随着偏流的增加,膜中金刚石晶粒尺寸变大且含量增加,β-SiC含量减少。 顶层金刚石薄膜可以在TMS浓度较低(小于等于0.075%)的复合中间层上原位生长,是因为中间层表面的金刚石晶粒没有被SiC覆盖。洛氏C压痕实验表明金刚石-碳化硅-硅化钴复合中间层可以提高金刚石薄膜与硬质合金基体的粘附性。将金刚石-碳化硅-硅化钴复合中间层经过碳氢处理后,进一步提高了金刚石薄膜与硬质合金基体的粘附性,复合中间层中的硅化钴有利于提高金刚石薄膜与硬质合金基体的粘附性。
[Abstract]:The deposition of diamond film on the surface of cemented carbide tools or components can greatly improve the wear resistance of tools or components, prolong their service life, and thus improve the production efficiency. However, the lack of adhesion between diamond film and cemented carbide substrate restricts its application. In this paper, the diamond-silicon-cobalt silicide composite films were deposited on cemented carbide (WC-6wt.% Co) substrates by hot-filament chemical vapor deposition with the mixture of hydrogen, methane and tetramethylsilane (TMS) as reaction gases. The composite film is used as the intermediate layer to improve the adhesion between diamond film and substrate. The surface morphology, composition, structure and adhesion of the films were characterized by scanning electron microscope (SEM),) (SEM), electron probe (EPMA), X diffraction (XRD), Raman spectroscopy (Raman) and Rockwell C indentation method. Diamond, 尾-SiC and cobalt silicide (Co2Si,CoSi) are contained in the diamond-silicon-cobalt silicide composite films. During the deposition process, diamond and 尾-SiC grains grow in competition. The formation of cobalt silicide originates from the diffusion of Co in the substrate. The composition and structure of diamond-silicon carbide cobalt silicide composite film can be controlled by adjusting the concentration and bias current of TMS in gas phase. With the increase of TMS concentration, the content of 尾-SiC in the film increases, the content of diamond decreases, and the 尾-SiC and diamond grains become smaller. The positive bias can promote the growth of diamond and enhance the secondary nucleation of diamond. With the increase of bias current, the grain size and content of diamond in the film increase and the content of 尾-SiC decreases. The top diamond films can be grown in situ on the composite interlayer with lower TMS concentration (less than 0.075%) because the diamond grains on the interlayer surface are not covered by SiC. Rockwell C indentation test shows that the interlayer of diamond silicon carbide and cobalt silicide can improve the adhesion of diamond film to cemented carbide substrate. The adhesion of diamond film to cemented carbide substrate was further improved after the interlayer of diamond, silicon carbide and cobalt silicide was treated with carbon and hydrogen. Cobalt silicide in the interlayer can improve the adhesion of diamond film to cemented carbide substrate.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：TB383.2
本文编号：2399754
[Abstract]:The deposition of diamond film on the surface of cemented carbide tools or components can greatly improve the wear resistance of tools or components, prolong their service life, and thus improve the production efficiency. However, the lack of adhesion between diamond film and cemented carbide substrate restricts its application. In this paper, the diamond-silicon-cobalt silicide composite films were deposited on cemented carbide (WC-6wt.% Co) substrates by hot-filament chemical vapor deposition with the mixture of hydrogen, methane and tetramethylsilane (TMS) as reaction gases. The composite film is used as the intermediate layer to improve the adhesion between diamond film and substrate. The surface morphology, composition, structure and adhesion of the films were characterized by scanning electron microscope (SEM),) (SEM), electron probe (EPMA), X diffraction (XRD), Raman spectroscopy (Raman) and Rockwell C indentation method. Diamond, 尾-SiC and cobalt silicide (Co2Si,CoSi) are contained in the diamond-silicon-cobalt silicide composite films. During the deposition process, diamond and 尾-SiC grains grow in competition. The formation of cobalt silicide originates from the diffusion of Co in the substrate. The composition and structure of diamond-silicon carbide cobalt silicide composite film can be controlled by adjusting the concentration and bias current of TMS in gas phase. With the increase of TMS concentration, the content of 尾-SiC in the film increases, the content of diamond decreases, and the 尾-SiC and diamond grains become smaller. The positive bias can promote the growth of diamond and enhance the secondary nucleation of diamond. With the increase of bias current, the grain size and content of diamond in the film increase and the content of 尾-SiC decreases. The top diamond films can be grown in situ on the composite interlayer with lower TMS concentration (less than 0.075%) because the diamond grains on the interlayer surface are not covered by SiC. Rockwell C indentation test shows that the interlayer of diamond silicon carbide and cobalt silicide can improve the adhesion of diamond film to cemented carbide substrate. The adhesion of diamond film to cemented carbide substrate was further improved after the interlayer of diamond, silicon carbide and cobalt silicide was treated with carbon and hydrogen. Cobalt silicide in the interlayer can improve the adhesion of diamond film to cemented carbide substrate.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2010
【分类号】：TB383.2
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