液相法制备高性能的有机场效应晶体管

发布时间：2019-01-07 20:03

【摘要】：近年来,液相法制备有机微纳阵列场效应晶体管(FET)受到人们的广泛关注。一方面,液相法具有操作简单、适合大面积生产等优势;另一方面,有机半导体能溶于有机溶液,还可与柔性衬底结合,制备柔性器件和电路。另外,有机微纳阵列可以与图案化电极相结合,在大规模、高集成度的电路中得到广泛应用。常见的液相法有:滴注法、提拉法和区域浇铸法。针对目前这些液相法存在的问题,如:对实验环境要求高、很容易有溶剂杂质的残留等,导致有机半导体的结晶质量差,器件迁移率低,我们通过提出新颖的、改善传统的液相法,有效提高了有机小分子和聚合物半导体的结晶质量,再结合绝缘层表面修饰,彻底优化了FET的性能。1.我们证实了一种毛笔可控法,利用毛的毛细作用,在垂直于毛的方向得到了大面积、高度有序的TCNQ微米线阵列。这种阵列不仅可以生长在传统的刚性衬底上,由于溶液铺开面积大、浓度梯度小,还可以生长在非传统的柔性和曲面衬底上。同一方向的微米线阵列的面积可达1.5×2.0 mm2,成功率为93%。基于这些微米线阵列,我们制备了刚性和柔性FET,并且通过十八烷基三氯硅烷(OTS)修饰Si/SiO2片,器件的迁移率提高了一个量级。2.我们利用简单的滴注法,通过选择合适的溶剂和衬底温度,得到了大面积、高质量的TIPS-pentacene微米带阵列,这在其他文献中是很难见到的。通过对SiO2绝缘层进行苯基三氯硅烷(PTS)修饰,器件迁移率提高了一个量级,最高为2.22 cm2/Vs,这是目前利用滴注法得到的TIPS-pentacene晶体FET中性能最高的。3.我们利用简单的旋涂法,通过调整溶液的浓度、溶剂类型以及退火条件和绝缘层,得到了高质量的PCDTPT聚合物薄膜,器件迁移率最高可达0.824 cm2/Vs,这是目前利用旋涂法得到的PCDTPT FET中性能最高的。
[Abstract]:In recent years, the preparation of organic microarray field-effect transistors (FET) by liquid phase method has attracted much attention. On the one hand, the liquid-phase method has the advantages of simple operation and suitable for large-scale production. On the other hand, organic semiconductors can be dissolved in organic solution and can be combined with flexible substrates to prepare flexible devices and circuits. In addition, organic nanoarrays can be combined with patterned electrodes, and are widely used in large-scale, highly integrated circuits. Common liquid-phase methods are: drip method, Czochralski method and regional casting method. In view of the problems existing in these liquid phase methods, such as the high requirement of experimental environment and the easy existence of residual solvent impurities, the crystallization quality of organic semiconductors is poor and the device mobility is low. The crystallization quality of organic small molecules and polymer semiconductors was improved by improving the traditional liquid phase method, and the properties of FET were optimized by combining with the surface modification of the insulating layer. 1. We have proved that a hairbrush controllable method is used to obtain a large area highly ordered TCNQ micron-line array perpendicular to the hair by the capillary action of the wool. This kind of array can be grown not only on traditional rigid substrates, but also on unconventional flexible and curved substrates due to its large solution spreading area and low concentration gradient. The area of the micrometer wire array in the same direction can reach 1. 5 脳 2. 0 mm2, and the success rate is 93. 3%. Based on these micron line arrays, rigid and flexible FET, were prepared and modified by octadecyl trichlorosilane (OTS). A large area and high quality TIPS-pentacene micron band array is obtained by selecting suitable solvent and substrate temperature by using a simple drip method, which is rarely seen in other literatures. By modifying the SiO2 insulator with phenyl trichlorosilane (PTS), the mobility of the device is increased by one order of magnitude, up to 2.22 cm2/Vs, which is the highest performance of the TIPS-pentacene crystal FET obtained by drip method at present. High quality PCDTPT polymer films were obtained by adjusting solution concentration, solvent type, annealing conditions and insulation layer by simple spin coating method. The maximum device mobility was up to 0.824 cm2/Vs,. This is the highest performance of PCDTPT FET obtained by spin-coating method.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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