衬底温度对磁控溅射法制备掺Ta氧化锌薄膜性能的影响

发布时间：2018-04-24 04:20

  本文选题：钽掺杂氧化锌 + 磁控溅射法　； 参考：《人工晶体学报》2017年09期

【摘要】：采用射频磁控溅射法,在不同的衬底温度下制备了钽(Ta)掺杂的氧化锌(ZnO)薄膜,采用X射线能谱(EDS)、X射线衍射(XRD)、扫描电镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱研究了衬底温度对制备的Ta掺杂ZnO薄膜的组分、微观结构、形貌和光学特性的影响。EDS的检测结果表明,Ta元素成功掺入到了ZnO薄膜;XRD图谱表明,掺入的Ta杂质是替代式杂质,没有破坏ZnO的六方晶格结构,随着衬底温度的升高,(002)衍射峰的强度先增大后降低,在400℃时达到最大;SEM测试表明当衬底温度较高时(400℃和500℃),Ta掺杂ZnO薄膜的晶粒明显变大;紫外-可见透过光谱显示,在可见光范围,Ta掺杂ZnO薄膜的平均透光率均高于80%,衬底不加热时制备的Ta掺杂ZnO的透光率最高;制备的Ta掺杂ZnO薄膜的禁带宽度范围为3.34~3.37 e V,衬底温度为500℃时制备的Ta掺杂ZnO薄膜的禁带宽度最小,为3.34 e V。PL光谱表明衬底温度为500℃时制备的Ta掺杂ZnO薄膜中缺陷较多,这也是造成薄膜禁带宽度变小的原因。
[Abstract]:Ta doped ZnO thin films were prepared by RF magnetron sputtering at different substrate temperatures. The composition and microstructure of Ta doped ZnO films prepared by substrate temperature were studied by means of X-ray energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectrophotometer and photoluminescence (PL) spectra. Effects of morphology and optical properties. The results showed that Ta elements were successfully doped into ZnO films. The results showed that the doped Ta impurities were substituted impurities and did not destroy the hexagonal lattice structure of ZnO. With the increase of substrate temperature, the intensity of diffraction peak first increases and then decreases, and the maximum intensity is obtained at 400 鈩，

本文编号：1795122