离子注入法制备富硅氧化硅薄膜的发光特性研究

发布时间：2018-05-05 05:28

本文选题：离子注入 + 硅离子　；参考：《南昌大学》2011年硕士论文

【摘要】：由于晶体Si的带间跃迁发光效率比GaAs等化合物半导体低3-5个数量级,无法满足光电子器件的需要,完全的硅基光电子集成网络也一直未能面市。将富余的硅元素掺杂进Si02基体中可以引入不同特性的发光中心,从而获得多种光谱范围的高效发光。离子注入热氧化硅层和超大规模集成电路(ULSI)的半导体工艺完全兼容,并可精确控制注入离子的分布、浓度和掺杂层厚度,是实现高效硅基发光的有效途径。通过干、湿两种热氧化法在单晶硅表面制备了两组热氧化硅薄膜样品；采用金属蒸气真空弧(MEVVA)离子源将不同注入剂量(2×1016、4×1016、6×1016、8×1016和1×1017/cm2)和能量(28、42、56和70keV)的Si离子注入干、湿热氧化硅基体,制得三组SiO2:Si注入层,标记为样品组G1-G3；分别在低温(200-500℃)、高温(800-1100℃)及不同的退火时间(1-4h)条件下对SiO2:Si注入层进行退火,制得了三组退火态富硅氧化硅样品。 TRIM程序的模拟结果表明：随着注入能量的增加,SiO2:Si注入层的厚度、移位原子总数均随之增大；不同注入剂量的SiO2:Si注入层具有不同的平均化学配比。FTIR谱表明湿氧化硅层内Si-H键和羟基(O-H键)的含量比干氧化硅层高,SiO2:Si注入层的Si-H振动模和羟基含量较原始热氧化硅层显著提高。XRD谱表明SiO2:Si注入层为非晶结构,并在高温退火态的注入层中检测到少量硅晶体析出相；Raman谱证实了高温退火态注入层中硅晶相的存在。XPS谱表明样品的主要成分是Si元素和O元素,并在样品表面检测到缺氧和富氧两种结构。各组注入态样品的室温可见光致发光(PL)谱表明,发光峰位集中在560-700nm的四个谱带。不同注入剂量的SiO2：Si注入层的PL谱线积分强度随注入剂量的增加有先增加后减小的趋势,这种趋势可以用注入层内总原子位移数的增加和浓度猝灭效应解释。不同注入能量的干SiO2：Si注入层的PL谱积分强度随注入能量增加而增大,湿SiO2：Si注入层则有先增加后减小的趋势。干注入层的变化趋势与移位原子总数随注入能量的变化趋势一致。低温退火后位于560～600nm和650～700nm的两个PL子谱带出现不同的温度变化趋势,变化趋势的差异应归因于不同类型缺陷发光中心热诱导机制的差别。不同温度高温退火后的样品发光强度显著下降,并未检测到源于纳米硅晶的发光峰位,表明经退火后缺陷中心已被钝化。不同时间高温退火的样品发现了明显的纳米硅发光峰位,表明大剂量、高能量的Si离子注入以及氢气氛二次退火是纳米硅形核的必要条件。综合以往文献的讨论以及XPS谱的测试结果,样品560～600nm发光中心起源于氧化硅层中的过氧缺陷SPR (small peroxy radicle),620-700nm的谱峰均源自非桥氧空穴中心(non bridge oxygen hole centre NBOHC)。各样品发光强度的相互关系及其随注入参数的变化与离子注入的电离效应和形成缺陷的扩散限制机制有关。缺陷中心SPR和NBOHC在低温、高温范围内具有不同的退火特性,随着退火温度的升高,SPR的数量显著下降,最终稳定在一定浓度无法完全钝化；NBOHC的发光强度经历了一个先增加后减小的过程,在1100℃的高温退火后完全失去发光活性。
[Abstract]:The interband luminescence efficiency of the crystal Si is 3-5 orders of magnitude lower than that of GaAs and other compounds, which can not meet the needs of the optoelectronic devices. The complete silicon based optoelectronic integrated network has been unable to face the market. It can be introduced into the Si02 matrix by the addition of the rich silicon elements into the luminescent centers of different properties, thus obtaining a variety of spectral ranges. High efficiency luminescence. The ion implantation thermal oxidation silicon layer and the ultra large scale integrated circuit (ULSI) are completely compatible, and can accurately control the distribution of the implanted ions. The concentration and thickness of the doped layer are an effective way to realize high efficiency silicon based luminescence.
Two groups of thermally oxidized silicon thin films were prepared on the surface of monocrystalline silicon by two kinds of hot oxidation methods. By using metal vapor vacuum arc (MEVVA) ion source, different injection doses (2 x 1016,4 x 1016,8 x 1016 and 1 x 1017/cm2) and energy (28,42,56 and 70keV) Si ions were injected into the dry, and the silicon substrate was oxidized by wet heat, and the three groups of SiO2:Si injection were obtained. The layer, marked as sample group G1-G3, annealed at the SiO2:Si injection layer at low temperature (200-500 C), high temperature (800-1100 C) and different annealing time (1-4h), and obtained three groups of annealed silicon rich silicon oxide samples.
The simulation results of the TRIM program show that with the increase of the injection energy, the thickness of the SiO2:Si injection layer and the total number of displaced atoms increase, and the.FTIR spectra of the SiO2:Si injection layer with different injection doses show that the content of the Si-H and the hydroxyl (O-H key) in the wet silica layer is higher than that of the dry silicon oxide layer and the SiO2:Si injection layer. The.XRD spectrum of the Si-H vibration mode and hydroxyl content is significantly higher than that of the original thermal oxidation silicon layer, indicating that the SiO2:Si injection layer is amorphous structure, and a small amount of silicon crystal is detected in the implanted layer at high temperature. The Raman spectrum confirms that the existence of.XPS spectra of silicon crystal in the high temperature annealed injection layer shows that the main component of the sample is the Si element and the O element. The two structures of hypoxia and oxygen enriched were detected on the surface of the sample.
The room temperature photoluminescence (PL) spectra of the injected samples in each group show that the luminescence peak is concentrated in the four bands of 560-700nm. The PL line integral strength of the SiO2:Si injection layer with different injection doses increases first and then decreases with the increase of the injection dose. This trend can be used to increase the total atomic displacement in the injected layer and the concentration of the concentration. The PL spectral integration strength of the dry SiO2:Si injection layer with different injection energy increases with the injection energy, and the wet SiO2:Si injection layer increases first and then decreases. The change trend of the dry injection layer and the total number of displaced atoms coincide with the changing trend of the injected energy. After low temperature annealing, it is located at 560 to 600nm and 650 to 700nm. The variation trend of the two PL subspectral bands is different. The difference in the change trend should be attributed to the difference in the thermal induction mechanism of the luminescent centers of different types of defects. The luminescence intensity of the samples after the annealing at different temperatures is significantly decreased, and the luminescence peak of the nanocrystalline crystals is not detected, indicating that the center of the defect has been passivated after annealing. The samples of high temperature annealed at high temperature have found obvious luminescence peaks of nanosilicon, indicating that high dose, high energy Si ion implantation and two annealing of hydrogen atmosphere are necessary conditions for nano silicon nucleation.
Through the discussion of previous literature and the test results of XPS spectrum, the 560 ~ 600nm luminescence center of the sample originates from the peroxy defect SPR (small peroxy radicle) in the silicon oxide layer. The peaks of 620-700nm are derived from the non bridged oxygen cavity center (non bridge oxygen hole centre). The correlation of all kinds of luminescent intensity and the variation with the injection parameters The ionization effect of ion implantation is related to the diffusion restriction mechanism for the formation of defects. The defect centers SPR and NBOHC have different annealing characteristics at low temperature and high temperature. With the increase of annealing temperature, the number of SPR decreases significantly, and the stability can not be completely obtuse at a certain concentration; the luminescence intensity of NBOHC has experienced an increase first. The later reduction process completely loses its luminous activity at high temperature after annealing at 1100.

【学位授予单位】：南昌大学
【学位级别】：硕士
【学位授予年份】：2011
【分类号】：O484.41

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