TiN节能镀膜玻璃的APCVD法制备及热处理工艺研究

发布时间：2018-05-31 01:27

  本文选题：TiN + 常压化学气相沉积法　； 参考：《浙江大学》2011年硕士论文

【摘要】：当前能源危机日益严重,具有优异节能效果的高效节能镀膜玻璃引起了广泛研究兴趣。但该玻璃目前大部分是多层复合结构,主要采用离线镀膜技术,不利于普遍使用。本论文尝试以常压化学气相沉积法,在玻璃片上沉积TiN薄膜,旨在研制能够与浮法玻璃生产线兼容的单层高效节能薄膜。 以TiCl4和NH3为反应物,以N2为保护气,用常压化学气相沉积法在玻璃基板上沉积TiN薄膜。运用XRD、EDX、SEM和UV-Vis分光光度计等测试手段,研究了制备参数(沉积温度、时间和冷却方式)和热处理参数(热处理温度、时间和气氛)对薄膜化学成分、形貌和光电性能的影响,以调整其低辐射和阳光控制功能。 研究发现TiN薄膜的成膜温度高于500℃,沉积时间大于1 min时开始出现结晶,且表现出(200)晶面取向生长。升高沉积温度、延长沉积时间和真空冷却都能改善结晶性能,降低N/Ti,改善导电性,提高平均中远红外反射率,即增强低辐射功能。而适中的沉积温度、长反应时间和氮气冷却能提高薄膜阳光控制功能。当沉积温度在600℃,沉积时间为90s,氮气冷却时薄膜能较好综合低辐射功能和阳光控制功能：平均中远红外反射率为55%,平均近红外反射率达到60%左右,可见光透过率为8%左右。此外,还发现高温和长时间反应会降低可见光反射率,这对解决节能镀膜玻璃应用上存在的光污染问题具有重要意义。 为了进一步改善薄膜光电性能,本研究对TiN薄膜进行热处理,结果显示：热处理后薄膜的结晶性能得到改善,N含量减少,晶格常数减小,应力和缺陷得到改善,导电性能变好,平均中远红外反射率从50%几增加到70%以上,平均近红外反射率从25%左右增大到37%。这说明热处理工艺能够加强薄膜的低辐射功能和阳光控制功能,使得薄膜更好的兼具保温和隔热。但是热处理温度和时间进一步增加,部分TiN被氧化,薄膜的各项性能变差。
[Abstract]:Nowadays, the energy crisis is becoming more and more serious, and the high-efficiency energy-saving coated glass with excellent energy-saving effect has attracted extensive research interest. However, most of the glass is multilayer composite structure at present, which mainly adopts off-line coating technology, which is not suitable for general use. In this paper, TiN thin films were deposited on glass substrates by atmospheric pressure chemical vapor deposition. The purpose of this thesis is to develop a single layer high efficiency energy saving thin film which can be compatible with float glass production line. TiN thin films were deposited on glass substrates by atmospheric pressure chemical vapor deposition with TiCl4 and NH3 as reactants and N2 as protective gas. The effects of preparation parameters (deposition temperature, time and cooling mode) and heat treatment parameters (heat treatment temperature, time and atmosphere) on the chemical composition, morphology and optoelectronic properties of the films were studied by means of UV-Vis spectrophotometer and SEM. To adjust its low radiation and sunlight control functions. It is found that when the temperature of TiN film is higher than 500 鈩，

本文编号：1957723